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Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles

Wen, Qingbo ; Feng, Yao ; Yu, Zhaoju ; Peng, Dong-Liang ; Nicoloso, Norbert ; Ionescu, Emanuel ; Riedel, Ralf ; Colombo, P. (2016)
Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles.
In: Journal of the American Ceramic Society, 99 (8)
doi: 10.1111/jace.14256
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.

Typ des Eintrags: Artikel
Erschienen: 2016
Autor(en): Wen, Qingbo ; Feng, Yao ; Yu, Zhaoju ; Peng, Dong-Liang ; Nicoloso, Norbert ; Ionescu, Emanuel ; Riedel, Ralf ; Colombo, P.
Art des Eintrags: Bibliographie
Titel: Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles
Sprache: Englisch
Publikationsjahr: 1 August 2016
Verlag: Wiley
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of the American Ceramic Society
Jahrgang/Volume einer Zeitschrift: 99
(Heft-)Nummer: 8
DOI: 10.1111/jace.14256
Kurzbeschreibung (Abstract):

The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.

Freie Schlagworte: Core–shell structures, microwaves, nanocomposites, silicon carbide, dielectric materials/properties
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 17 Aug 2016 08:52
Letzte Änderung: 17 Aug 2016 08:52
PPN:
Sponsoren: Funded by National Natural Science Foundation of China. Grant Number: 50802079, Funded by Natural Science Foundation of Fujian Province of China. Grant Number: 2015J01221, Funded by National Basic Research Program of China. Grant Number: 2012CB933103, Funded by Fundamental Research Funds for the Central Universities. Grant Number: 20720150140, Funded by China Scholarship Council. Grant Number: 201206130059
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