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Low temperature annealing effects on the stability of Bi nanowires

Cassinelli, Marco and Romanenko, Anton and Reith, Heiko and Völklein, Friedemann and Sigle, Wilfried and Trautmann, Christina and Toimil-Molares, Maria Eugenia (2016):
Low temperature annealing effects on the stability of Bi nanowires.
213, In: physica status solidi (a), (3), WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany, pp. 603-609, ISSN 18626300, [Online-Edition: http://dx.doi.org/10.1002/pssa.201532613],
[Article]

Abstract

To investigate the physical properties of Bi nanowires and to explore their possible implementation in thermoelectric devices, it is essential to understand their chemical and thermal stability in air both at room and moderate temperatures. In this work, we study the influence of low temperature annealing processes on the morphology and composition of the wires by scanning and transmission electron microscopy and by Raman spectroscopy, revealing the formation of a metal oxide phase. This oxidation process initiates an increase of the nanowires surface roughness at low annealing temperatures, while clear protuberances are formed at 250 °C. Difficulties to electrically contact single Bi nanowires, as well as the high resistance values measured and reported by other groups, are attributed to this oxidation process, which constitutes a clear challenge for the reliable characterization of Bi nanowires and the investigation of their performance.

Item Type: Article
Erschienen: 2016
Creators: Cassinelli, Marco and Romanenko, Anton and Reith, Heiko and Völklein, Friedemann and Sigle, Wilfried and Trautmann, Christina and Toimil-Molares, Maria Eugenia
Title: Low temperature annealing effects on the stability of Bi nanowires
Language: English
Abstract:

To investigate the physical properties of Bi nanowires and to explore their possible implementation in thermoelectric devices, it is essential to understand their chemical and thermal stability in air both at room and moderate temperatures. In this work, we study the influence of low temperature annealing processes on the morphology and composition of the wires by scanning and transmission electron microscopy and by Raman spectroscopy, revealing the formation of a metal oxide phase. This oxidation process initiates an increase of the nanowires surface roughness at low annealing temperatures, while clear protuberances are formed at 250 °C. Difficulties to electrically contact single Bi nanowires, as well as the high resistance values measured and reported by other groups, are attributed to this oxidation process, which constitutes a clear challenge for the reliable characterization of Bi nanowires and the investigation of their performance.

Journal or Publication Title: physica status solidi (a)
Volume: 213
Number: 3
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany
Uncontrolled Keywords: annealing, bismuth, nanowires, oxides, Raman spectroscopy, scanning electron microscopy, thermoelectrics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 15 Jun 2016 08:42
Official URL: http://dx.doi.org/10.1002/pssa.201532613
Identification Number: doi:10.1002/pssa.201532613
Funders: We thank the Deutsche Forschungsgemeinschaft (DFG) for financial support within the priority program SPP 1386., M.C. thanks the Helmholtz Graduate School for Hadron and Ion Research “HGS-HIRe” for the financial support.
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