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Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers

Sirkeli, V. P. and Yilmazoglu, O. and Küppers, F. and Hartnagel, H. L. (2015):
Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers.
In: 3rd International Conference on Nanotechnologies and Biomedical Engineering ICNBME, Chisinau, Republic of Moldova, [Online-Edition: http://www.icnbme.sibm.md/home.html],
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2015
Creators: Sirkeli, V. P. and Yilmazoglu, O. and Küppers, F. and Hartnagel, H. L.
Title: Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers
Language: English
Divisions: 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 3rd International Conference on Nanotechnologies and Biomedical Engineering ICNBME
Event Location: Chisinau, Republic of Moldova
Date Deposited: 31 Mar 2016 12:03
Official URL: http://www.icnbme.sibm.md/home.html
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