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Surface Potentials of (111), (110) and (100) oriented CeO2−x thin films

Wardenga, Hans F. ; Klein, Andreas (2016)
Surface Potentials of (111), (110) and (100) oriented CeO2−x thin films.
In: Applied Surface Science, 377
doi: 10.1016/j.apsusc.2016.03.091
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Differently oriented CeO2 thin films were prepared by radio frequency magnetron sputter deposition from a nominally undoped CeO2 target. (111), (110) and (100) oriented films were achieved by deposition onto Al2O3(0001)/Pt(111), MgO(110)/Pt(110) and SrTiO3:Nb(100) substrates, respectively. Epitaxial growth is verified using X-ray diffraction analysis. The films were analyzed by in situ photoelectron spectroscopy to determine the ionization potential, work function, Fermi level position and Ce3+ concentration at the surface in dependence of crystal orientation, deposition conditions and post-deposition treatment in reducing and oxidizing atmosphere. We observed a very high variation of the work function and ionization potential of more than 2 eV for all surface orientations, while the Fermi level varies by only 0.3 eV within the energy gap. The work function generally decreases with increasing Ce3+ surface concentration but comparatively high Ce3+ concentrations remain even after strongly oxidizing treatments. This is related to the presence of subsurface oxygen vacancies.

Typ des Eintrags: Artikel
Erschienen: 2016
Autor(en): Wardenga, Hans F. ; Klein, Andreas
Art des Eintrags: Bibliographie
Titel: Surface Potentials of (111), (110) and (100) oriented CeO2−x thin films
Sprache: Englisch
Publikationsjahr: 2016
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Surface Science
Jahrgang/Volume einer Zeitschrift: 377
DOI: 10.1016/j.apsusc.2016.03.091
Kurzbeschreibung (Abstract):

Differently oriented CeO2 thin films were prepared by radio frequency magnetron sputter deposition from a nominally undoped CeO2 target. (111), (110) and (100) oriented films were achieved by deposition onto Al2O3(0001)/Pt(111), MgO(110)/Pt(110) and SrTiO3:Nb(100) substrates, respectively. Epitaxial growth is verified using X-ray diffraction analysis. The films were analyzed by in situ photoelectron spectroscopy to determine the ionization potential, work function, Fermi level position and Ce3+ concentration at the surface in dependence of crystal orientation, deposition conditions and post-deposition treatment in reducing and oxidizing atmosphere. We observed a very high variation of the work function and ionization potential of more than 2 eV for all surface orientations, while the Fermi level varies by only 0.3 eV within the energy gap. The work function generally decreases with increasing Ce3+ surface concentration but comparatively high Ce3+ concentrations remain even after strongly oxidizing treatments. This is related to the presence of subsurface oxygen vacancies.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 30 Mär 2016 10:57
Letzte Änderung: 05 Apr 2016 20:31
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