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Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Frischbier, Mareike V. and Wardenga, Hans F. and Weidner, Mirko and Bierwagen, Oliver and Jia, Junjun and Shigesato, Yuzo and Klein, Andreas (2016):
Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films.
614, In: Thin Solid Films, pp. 62-68, ISSN 00406090, [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2016.03.022],
[Article]

Abstract

The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto’s model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt:% SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ∼ 1021 cm−3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 is attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Item Type: Article
Erschienen: 2016
Creators: Frischbier, Mareike V. and Wardenga, Hans F. and Weidner, Mirko and Bierwagen, Oliver and Jia, Junjun and Shigesato, Yuzo and Klein, Andreas
Title: Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films
Language: English
Abstract:

The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto’s model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt:% SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ∼ 1021 cm−3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 is attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Journal or Publication Title: Thin Solid Films
Volume: 614
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 22 Mar 2016 21:13
Official URL: http://dx.doi.org/10.1016/j.tsf.2016.03.022
Identification Number: doi:10.1016/j.tsf.2016.03.022
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