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Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Frischbier, Mareike V. ; Wardenga, Hans F. ; Weidner, Mirko ; Bierwagen, Oliver ; Jia, Junjun ; Shigesato, Yuzo ; Klein, Andreas (2016)
Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films.
In: Thin Solid Films, 614
doi: 10.1016/j.tsf.2016.03.022
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto’s model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt:% SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ∼ 1021 cm−3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 is attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Typ des Eintrags: Artikel
Erschienen: 2016
Autor(en): Frischbier, Mareike V. ; Wardenga, Hans F. ; Weidner, Mirko ; Bierwagen, Oliver ; Jia, Junjun ; Shigesato, Yuzo ; Klein, Andreas
Art des Eintrags: Bibliographie
Titel: Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films
Sprache: Englisch
Publikationsjahr: 2016
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Thin Solid Films
Jahrgang/Volume einer Zeitschrift: 614
DOI: 10.1016/j.tsf.2016.03.022
Kurzbeschreibung (Abstract):

The influence of dopant species and concentration on the grain boundary scattering of differently doped In2O3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries EB are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that EB is usually underestimated when evaluated based on Seto’s model. It is also shown that the most commonly used Sn doping of In2O3 with a dopant concentration > 2 wt:% SnO2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ∼ 1021 cm−3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In2O3 is attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
DFG-Sonderforschungsbereiche (inkl. Transregio)
Hinterlegungsdatum: 22 Mär 2016 21:13
Letzte Änderung: 28 Aug 2016 15:04
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