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Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors

Preis, S. and Wiens, A. and Wolff, N. and Jakoby, R. and Heinrich, W. and Bengtsson, O. (2015):
Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors.
In: Microwave Conference (EuMC), 2015 European, [Online-Edition: http://dx.doi.org/10.1109/EuMC.2015.7346007],
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2015
Creators: Preis, S. and Wiens, A. and Wolff, N. and Jakoby, R. and Heinrich, W. and Bengtsson, O.
Title: Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors
Language: German
Uncontrolled Keywords: III-V semiconductors;MIM devices;gallium compounds;high electron mobility transistors;semiconductor device measurement;semiconductor device packaging;semiconductor device testing;thermal analysis;thick films;varactors;wide band gap semiconductors;BaSrTiO3;CW rating;GaN;HEMT technology;MIM thickfilm BST varactors;barium-strontium-titanate MIM varactors;electrical efficiency;frequency-agile packaged HEMT;frequency-agile transistor module;modulated-signal measurements;thermal cycling;tuning voltage range;voltage 400 V;wireless communication systems;Impedance;Linearity;Radio frequency;Temperature measurement;Transistors;Tuning;Varactors;BST;power transistors;tunable devices;varactors
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Conference (EuMC), 2015 European
Date Deposited: 21 Mar 2016 12:05
Official URL: http://dx.doi.org/10.1109/EuMC.2015.7346007
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