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Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2thin films for solar cells - a review

Abou-Ras, Daniel and Schmidt, Sebastian S. and Schäfer, Norbert and Kavalakkatt, Jaison and Rissom, Thorsten and Unold, Thomas and Kirchartz, Thomas and Simsek Sanli, Ekin and van Aken, Peter A. and Ramasse, Quentin M. and Kleebe, Hans-Joachim and Azulay, Doron and Balberg, Isaac and Millo, Oded and Cojocaru-Mirédin, Oana and Barragan-Yani, Daniel and Albe, Karsten and Haarstrich, Jakob and Ronning, Carsten (2016):
Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2thin films for solar cells - a review.
In: physica status solidi (RRL) - Rapid Research Letters, pp. 1-13, ISSN 18626254,
[Online-Edition: http://dx.doi.org/10.1002/pssr.201510440],
[Article]

Abstract

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices

Item Type: Article
Erschienen: 2016
Creators: Abou-Ras, Daniel and Schmidt, Sebastian S. and Schäfer, Norbert and Kavalakkatt, Jaison and Rissom, Thorsten and Unold, Thomas and Kirchartz, Thomas and Simsek Sanli, Ekin and van Aken, Peter A. and Ramasse, Quentin M. and Kleebe, Hans-Joachim and Azulay, Doron and Balberg, Isaac and Millo, Oded and Cojocaru-Mirédin, Oana and Barragan-Yani, Daniel and Albe, Karsten and Haarstrich, Jakob and Ronning, Carsten
Title: Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2thin films for solar cells - a review
Language: English
Abstract:

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices

Journal or Publication Title: physica status solidi (RRL) - Rapid Research Letters
Uncontrolled Keywords: Cu(In,Ga)Se2;grain boundaries;twin boundaries; stacking faults;dislocations
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 03 Mar 2016 11:52
Official URL: http://dx.doi.org/10.1002/pssr.201510440
Identification Number: doi:10.1002/pssr.201510440
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