Abou-Ras, Daniel ; Schmidt, Sebastian S. ; Schäfer, Norbert ; Kavalakkatt, Jaison ; Rissom, Thorsten ; Unold, Thomas ; Kirchartz, Thomas ; Simsek Sanli, Ekin ; Aken, Peter A. van ; Ramasse, Quentin M. ; Kleebe, Hans-Joachim ; Azulay, Doron ; Balberg, Isaac ; Millo, Oded ; Cojocaru-Mirédin, Oana ; Barragan-Yani, Daniel ; Albe, Karsten ; Haarstrich, Jakob ; Ronning, Carsten (2016)
Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review.
In: Physica status solidi (RRL) - Rapid Research Letters, 10 (5)
doi: 10.1002/pssr.201510440
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2016 |
Autor(en): | Abou-Ras, Daniel ; Schmidt, Sebastian S. ; Schäfer, Norbert ; Kavalakkatt, Jaison ; Rissom, Thorsten ; Unold, Thomas ; Kirchartz, Thomas ; Simsek Sanli, Ekin ; Aken, Peter A. van ; Ramasse, Quentin M. ; Kleebe, Hans-Joachim ; Azulay, Doron ; Balberg, Isaac ; Millo, Oded ; Cojocaru-Mirédin, Oana ; Barragan-Yani, Daniel ; Albe, Karsten ; Haarstrich, Jakob ; Ronning, Carsten |
Art des Eintrags: | Bibliographie |
Titel: | Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review |
Sprache: | Englisch |
Publikationsjahr: | 1 März 2016 |
Verlag: | Wiley |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physica status solidi (RRL) - Rapid Research Letters |
Jahrgang/Volume einer Zeitschrift: | 10 |
(Heft-)Nummer: | 5 |
DOI: | 10.1002/pssr.201510440 |
URL / URN: | https://onlinelibrary.wiley.com/doi/full/10.1002/pssr.201510... |
Kurzbeschreibung (Abstract): | The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices |
Freie Schlagworte: | Cu(In,Ga)Se2, grain boundaries, twin boundaries, stacking faults, dislocations |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung |
Hinterlegungsdatum: | 03 Mär 2016 11:52 |
Letzte Änderung: | 18 Aug 2021 12:11 |
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