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Emergence of a Chern-insulating state from a semi-Dirac dispersion

Huang, Huaqing and Liu, Zhirong and Zhang, Hongbin and Duan, Wenhui and Vanderbilt, David (2015):
Emergence of a Chern-insulating state from a semi-Dirac dispersion.
92, In: Physical Review B, (16), American Physical Society, p. 161115, ISSN 1098-0121, [Online-Edition: http://dx.doi.org/10.1103/PhysRevB.92.161115],
[Article]

Abstract

By combining first-principles calculations with Wannier-based tight-binding modeling, we demonstrate that a TiO2/VO2 heterostructure that was previously proposed as a prototypical semi-Dirac system becomes a Chern insulator (quantum anomalous Hall insulator) in the presence of spin-orbit coupling. We show that this occurs only when the semi-Dirac structure is of a special type that can be formed by the merging of three conventional Dirac points. Our results reveal how the nontrivial topology with a nonzero Chern number emerges naturally from this kind of semi-Dirac structure, establishing a general scenario that provides a different route to the formation of Chern-insulating states in practical materials systems.

Item Type: Article
Erschienen: 2015
Creators: Huang, Huaqing and Liu, Zhirong and Zhang, Hongbin and Duan, Wenhui and Vanderbilt, David
Title: Emergence of a Chern-insulating state from a semi-Dirac dispersion
Language: English
Abstract:

By combining first-principles calculations with Wannier-based tight-binding modeling, we demonstrate that a TiO2/VO2 heterostructure that was previously proposed as a prototypical semi-Dirac system becomes a Chern insulator (quantum anomalous Hall insulator) in the presence of spin-orbit coupling. We show that this occurs only when the semi-Dirac structure is of a special type that can be formed by the merging of three conventional Dirac points. Our results reveal how the nontrivial topology with a nonzero Chern number emerges naturally from this kind of semi-Dirac structure, establishing a general scenario that provides a different route to the formation of Chern-insulating states in practical materials systems.

Journal or Publication Title: Physical Review B
Volume: 92
Number: 16
Publisher: American Physical Society
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Theory of Magnetic Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 01 Mar 2016 13:39
Official URL: http://dx.doi.org/10.1103/PhysRevB.92.161115
Identification Number: doi:10.1103/PhysRevB.92.161115
Funders: D.V. is supported by NSF Grant No. DMR-10-05838., H.H., Z.L., and W.D. are supported by the National Natural Science Foundation of China (Grants No. 21373015 and No. 11334006) and the Ministry of Science and Technology of China (Grants No. 2011CB606405 and No. 2011CB921901)., H.H. additionally acknowledges the Tsinghua exchange student fund for supporting his visit of Rutgers University.
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