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Emergence of a Chern-insulating state from a semi-Dirac dispersion

Huang, Huaqing ; Liu, Zhirong ; Zhang, Hongbin ; Duan, Wenhui ; Vanderbilt, David (2015)
Emergence of a Chern-insulating state from a semi-Dirac dispersion.
In: Physical Review B, 92 (16)
doi: 10.1103/PhysRevB.92.161115
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

By combining first-principles calculations with Wannier-based tight-binding modeling, we demonstrate that a TiO2/VO2 heterostructure that was previously proposed as a prototypical semi-Dirac system becomes a Chern insulator (quantum anomalous Hall insulator) in the presence of spin-orbit coupling. We show that this occurs only when the semi-Dirac structure is of a special type that can be formed by the merging of three conventional Dirac points. Our results reveal how the nontrivial topology with a nonzero Chern number emerges naturally from this kind of semi-Dirac structure, establishing a general scenario that provides a different route to the formation of Chern-insulating states in practical materials systems.

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Huang, Huaqing ; Liu, Zhirong ; Zhang, Hongbin ; Duan, Wenhui ; Vanderbilt, David
Art des Eintrags: Bibliographie
Titel: Emergence of a Chern-insulating state from a semi-Dirac dispersion
Sprache: Englisch
Publikationsjahr: 28 Oktober 2015
Verlag: American Physical Society
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 92
(Heft-)Nummer: 16
DOI: 10.1103/PhysRevB.92.161115
Kurzbeschreibung (Abstract):

By combining first-principles calculations with Wannier-based tight-binding modeling, we demonstrate that a TiO2/VO2 heterostructure that was previously proposed as a prototypical semi-Dirac system becomes a Chern insulator (quantum anomalous Hall insulator) in the presence of spin-orbit coupling. We show that this occurs only when the semi-Dirac structure is of a special type that can be formed by the merging of three conventional Dirac points. Our results reveal how the nontrivial topology with a nonzero Chern number emerges naturally from this kind of semi-Dirac structure, establishing a general scenario that provides a different route to the formation of Chern-insulating states in practical materials systems.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Theorie magnetischer Materialien
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 01 Mär 2016 13:39
Letzte Änderung: 01 Mär 2016 13:39
PPN:
Sponsoren: D.V. is supported by NSF Grant No. DMR-10-05838., H.H., Z.L., and W.D. are supported by the National Natural Science Foundation of China (Grants No. 21373015 and No. 11334006) and the Ministry of Science and Technology of China (Grants No. 2011CB606405 and No. 2011CB921901)., H.H. additionally acknowledges the Tsinghua exchange student fund for supporting his visit of Rutgers University.
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