Morasch, Jan ; Wardenga, Hans F. ; Jaegermann, Wolfram ; Klein, Andreas (2016)
Influence of grain boundaries and interfaces on the electronic structure of polycrystalline CuO thin films.
In: physica status solidi (a), 213 (6)
doi: 10.1002/pssa.201533018
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
CuO thin films were grown by reactive magnetron sputtering and analyzed with respect to their structural, chemical, optical, and electrical properties. The films are strongly p-type with carrier concentrations of ∼ 1020 cm−3. Carrier accumulation at grain boundaries is evident from temperature and gas phase dependent conductivity measurements. The films show high absorption coefficients with a band gap of approximately 1.5 eV. Interface formation with TiO2 and Au was studied by photoelectron spectroscopy. Regarding the TiO2/CuO interface, a strong band bending in the TiO2 substrate and a valence band offset of ∼ 2.4 eV were observed. The TiO2 conduction band is therefore approximately midgap of CuO at the interface. CuO is chemically reduced upon Au deposition but an ideal ohmic contact is formed with a Fermi level at the valence band maximum of CuO. Solar cell device structures were prepared of fluorine doped SnO2/TiO2 substrates and Au back contacts, revealing open circuit voltages of <0.15V and photocurrent densities of <0.1 mA/cm2. The photoactivity of the structures is ascribed mostly to the TiO2 substrate.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Morasch, Jan ; Wardenga, Hans F. ; Jaegermann, Wolfram ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Influence of grain boundaries and interfaces on the electronic structure of polycrystalline CuO thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 25 Februar 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (a) |
| Jahrgang/Volume einer Zeitschrift: | 213 |
| (Heft-)Nummer: | 6 |
| DOI: | 10.1002/pssa.201533018 |
| Kurzbeschreibung (Abstract): | CuO thin films were grown by reactive magnetron sputtering and analyzed with respect to their structural, chemical, optical, and electrical properties. The films are strongly p-type with carrier concentrations of ∼ 1020 cm−3. Carrier accumulation at grain boundaries is evident from temperature and gas phase dependent conductivity measurements. The films show high absorption coefficients with a band gap of approximately 1.5 eV. Interface formation with TiO2 and Au was studied by photoelectron spectroscopy. Regarding the TiO2/CuO interface, a strong band bending in the TiO2 substrate and a valence band offset of ∼ 2.4 eV were observed. The TiO2 conduction band is therefore approximately midgap of CuO at the interface. CuO is chemically reduced upon Au deposition but an ideal ohmic contact is formed with a Fermi level at the valence band maximum of CuO. Solar cell device structures were prepared of fluorine doped SnO2/TiO2 substrates and Au back contacts, revealing open circuit voltages of <0.15V and photocurrent densities of <0.1 mA/cm2. The photoactivity of the structures is ascribed mostly to the TiO2 substrate. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 23 Feb 2016 20:26 |
| Letzte Änderung: | 13 Jun 2016 10:51 |
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