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High-temperature piezoresistive C / SiOC sensors

Roth, F. and Schmerbauch, C. and Ionescu, E. and Nicoloso, N. and Guillon, O. and Riedel, R. (2015):
High-temperature piezoresistive C / SiOC sensors.
In: Journal of Sensors and Sensor Systems, 4 (1), COPERNICUS GESELLSCHAFT MBH, pp. 133-136, ISSN 2194-878X,
[Online-Edition: http://dx.doi.org/10.5194/jsss-4-133-2015],
[Article]

Abstract

Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1-10MPa) and temperature (1000-1200 degrees C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size <= 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C/ SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 ffi C. The measured k values of about 80 +/- 20 at the highest temperature reading (T = 1200 degrees C) reveal that C/ SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.

Item Type: Article
Erschienen: 2015
Creators: Roth, F. and Schmerbauch, C. and Ionescu, E. and Nicoloso, N. and Guillon, O. and Riedel, R.
Title: High-temperature piezoresistive C / SiOC sensors
Language: English
Abstract:

Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1-10MPa) and temperature (1000-1200 degrees C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size <= 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C/ SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 ffi C. The measured k values of about 80 +/- 20 at the highest temperature reading (T = 1200 degrees C) reveal that C/ SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.

Journal or Publication Title: Journal of Sensors and Sensor Systems
Volume: 4
Number: 1
Publisher: COPERNICUS GESELLSCHAFT MBH
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 22 Feb 2016 12:03
Official URL: http://dx.doi.org/10.5194/jsss-4-133-2015
Identification Number: doi:10.5194/jsss-4-133-2015
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