Roth, F. ; Schmerbauch, C. ; Ionescu, E. ; Nicoloso, N. ; Guillon, O. ; Riedel, R. (2015)
High-temperature piezoresistive C / SiOC sensors.
In: Journal of Sensors and Sensor Systems, 4 (1)
doi: 10.5194/jsss-4-133-2015
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1-10MPa) and temperature (1000-1200 degrees C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size <= 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C/ SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 ffi C. The measured k values of about 80 +/- 20 at the highest temperature reading (T = 1200 degrees C) reveal that C/ SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Roth, F. ; Schmerbauch, C. ; Ionescu, E. ; Nicoloso, N. ; Guillon, O. ; Riedel, R. |
| Art des Eintrags: | Bibliographie |
| Titel: | High-temperature piezoresistive C / SiOC sensors |
| Sprache: | Englisch |
| Publikationsjahr: | 2015 |
| Verlag: | COPERNICUS GESELLSCHAFT MBH |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Sensors and Sensor Systems |
| Jahrgang/Volume einer Zeitschrift: | 4 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.5194/jsss-4-133-2015 |
| Kurzbeschreibung (Abstract): | Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1-10MPa) and temperature (1000-1200 degrees C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size <= 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C/ SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 ffi C. The measured k values of about 80 +/- 20 at the highest temperature reading (T = 1200 degrees C) reveal that C/ SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 22 Feb 2016 12:03 |
| Letzte Änderung: | 22 Feb 2016 12:03 |
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