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A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics

Baby, Tessy T. and Garlapati, Suresh K. and Dehm, Simone and Häming, Marc and Kruk, Robert and Hahn, Horst and Dasgupta, Subho (2015):
A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics.
9, In: ACS Nano, (3), American Chemical Society, pp. 3075-3083, ISSN 1936-0851, [Online-Edition: http://dx.doi.org/10.1021/nn507326z],
[Article]

Abstract

Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (similar to 18) at a supply voltage of only 1.5 V.

Item Type: Article
Erschienen: 2015
Creators: Baby, Tessy T. and Garlapati, Suresh K. and Dehm, Simone and Häming, Marc and Kruk, Robert and Hahn, Horst and Dasgupta, Subho
Title: A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics
Language: English
Abstract:

Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (similar to 18) at a supply voltage of only 1.5 V.

Journal or Publication Title: ACS Nano
Volume: 9
Number: 3
Publisher: American Chemical Society
Uncontrolled Keywords: printed electronics, field-effect transistor, oxide electronics, room-temperature processing, chemical curing
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 10 Feb 2016 09:21
Official URL: http://dx.doi.org/10.1021/nn507326z
Identification Number: doi:10.1021/nn507326z
Funders: The authors acknowledge the financial support from Helmholtz Association in the form of Helmholtz Virtual Institute VI-530 at Karlsruhe Institute of Technology (KIT).
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