Baby, Tessy T. ; Garlapati, Suresh K. ; Dehm, Simone ; Häming, Marc ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho (2015)
A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics.
In: ACS Nano, 9 (3)
doi: 10.1021/nn507326z
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (similar to 18) at a supply voltage of only 1.5 V.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Baby, Tessy T. ; Garlapati, Suresh K. ; Dehm, Simone ; Häming, Marc ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho |
| Art des Eintrags: | Bibliographie |
| Titel: | A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics |
| Sprache: | Englisch |
| Publikationsjahr: | März 2015 |
| Verlag: | American Chemical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Nano |
| Jahrgang/Volume einer Zeitschrift: | 9 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1021/nn507326z |
| Kurzbeschreibung (Abstract): | Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (similar to 18) at a supply voltage of only 1.5 V. |
| Freie Schlagworte: | printed electronics, field-effect transistor, oxide electronics, room-temperature processing, chemical curing |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 10 Feb 2016 09:21 |
| Letzte Änderung: | 10 Feb 2016 09:21 |
| PPN: | |
| Sponsoren: | The authors acknowledge the financial support from Helmholtz Association in the form of Helmholtz Virtual Institute VI-530 at Karlsruhe Institute of Technology (KIT). |
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