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Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors

Jesper, Malte ; Alt, Milan ; Schinke, Janusz ; Hillebrandt, Sabina ; Angelova, Iva ; Rohnacher, Valentina ; Pucci, Annemarie ; Lemmer, Uli ; Jaegermann, Wolfram ; Kowalsky, Wolfgang ; Glaser, Tobias ; Mankel, Eric ; Lovrincic, Robert ; Golling, Florian ; Hamburger, Manuel ; Bunz, Uwe H. F. (2015):
Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors.
In: Langmuir, 31 (37), pp. 10303-10309. ISSN 0743-7463,
[Article]

Item Type: Article
Erschienen: 2015
Creators: Jesper, Malte ; Alt, Milan ; Schinke, Janusz ; Hillebrandt, Sabina ; Angelova, Iva ; Rohnacher, Valentina ; Pucci, Annemarie ; Lemmer, Uli ; Jaegermann, Wolfram ; Kowalsky, Wolfgang ; Glaser, Tobias ; Mankel, Eric ; Lovrincic, Robert ; Golling, Florian ; Hamburger, Manuel ; Bunz, Uwe H. F.
Title: Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors
Language: English
Journal or Publication Title: Langmuir
Journal volume: 31
Number: 37
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 09 Feb 2016 15:15
Official URL: http://dx.doi.org/10.1021/acs.langmuir.5b02316
Identification Number: doi:10.1021/acs.langmuir.5b02316
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