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Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors

Jesper, Malte and Alt, Milan and Schinke, Janusz and Hillebrandt, Sabina and Angelova, Iva and Rohnacher, Valentina and Pucci, Annemarie and Lemmer, Uli and Jaegermann, Wolfram and Kowalsky, Wolfgang and Glaser, Tobias and Mankel, Eric and Lovrincic, Robert and Golling, Florian and Hamburger, Manuel and Bunz, Uwe H. F. (2015):
Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors.
In: Langmuir, pp. 10303-10309, 31, (37), ISSN 0743-7463, [Online-Edition: http://dx.doi.org/10.1021/acs.langmuir.5b02316],
[Article]

Item Type: Article
Erschienen: 2015
Creators: Jesper, Malte and Alt, Milan and Schinke, Janusz and Hillebrandt, Sabina and Angelova, Iva and Rohnacher, Valentina and Pucci, Annemarie and Lemmer, Uli and Jaegermann, Wolfram and Kowalsky, Wolfgang and Glaser, Tobias and Mankel, Eric and Lovrincic, Robert and Golling, Florian and Hamburger, Manuel and Bunz, Uwe H. F.
Title: Dipolar SAMs Reduce Charge Carrier Injection Barriers in n-Channel Organic Field Effect Transistors
Language: English
Journal or Publication Title: Langmuir
Volume: 31
Number: 37
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 09 Feb 2016 15:15
Official URL: http://dx.doi.org/10.1021/acs.langmuir.5b02316
Identification Number: doi:10.1021/acs.langmuir.5b02316
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