Garlapati, Suresh Kumar ; Baby, Tessy Theres ; Dehm, Simone ; Hammad, Mohammed ; Chakravadhanula, Venkata Sai Kiran ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho (2015)
Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.
In: Small, 11 (29)
doi: 10.1002/smll.201403288
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (approximate to 21 at a supply voltage of only 1.5 V) and low static power dissipation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Garlapati, Suresh Kumar ; Baby, Tessy Theres ; Dehm, Simone ; Hammad, Mohammed ; Chakravadhanula, Venkata Sai Kiran ; Kruk, Robert ; Hahn, Horst ; Dasgupta, Subho |
| Art des Eintrags: | Bibliographie |
| Titel: | Ink-Jet Printed CMOS Electronics from Oxide Semiconductors |
| Sprache: | Englisch |
| Publikationsjahr: | 5 August 2015 |
| Verlag: | WILEY-V C H VERLAG GMBH, WEINHEIM, GERMANY |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Small |
| Jahrgang/Volume einer Zeitschrift: | 11 |
| (Heft-)Nummer: | 29 |
| DOI: | 10.1002/smll.201403288 |
| Kurzbeschreibung (Abstract): | Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (approximate to 21 at a supply voltage of only 1.5 V) and low static power dissipation. |
| Freie Schlagworte: | electrolyte gating, ink-jet printing, oxide semiconductors, printed electronics |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 04 Feb 2016 09:51 |
| Letzte Änderung: | 04 Feb 2016 09:51 |
| PPN: | |
| Sponsoren: | Moreover, the authors like to acknowledge the financial support by Helmholtz Gemeinschaft in the form of Helmholtz Virtual Institute VI-530., The financial support to the Joint Research Laboratory Nanomaterials by the State of Hesse is also gratefully acknowledged. |
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