Weidner, Mirko ; Jia, Junjun ; Shigesato, Yuzo ; Klein, Andreas (2016)
Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum.
In: physica status solidi (b), 253 (5)
doi: 10.1002/pssb.201552720
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
SnO2 films doped with antimony or tantalum were sputterdeposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4 × 10−4 Wcm, carrier density 4.5 × 1020 cm−3, and mobility 25.7 cm2 Vs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2016 |
| Autor(en): | Weidner, Mirko ; Jia, Junjun ; Shigesato, Yuzo ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Comparative study of sputter-deposited SnO2 films doped with antimony or tantalum |
| Sprache: | Englisch |
| Publikationsjahr: | 2016 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (b) |
| Jahrgang/Volume einer Zeitschrift: | 253 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.1002/pssb.201552720 |
| Kurzbeschreibung (Abstract): | SnO2 films doped with antimony or tantalum were sputterdeposited for comparison, using an identical set of parameters. The influence of dopant concentration and choice of deposition parameters such as substrate temperature on the optoelectronic properties, especially film resistivity, were determined. Comparative analysis shows that tantalum doping yields lower film resistivity, probably due to an increased inhibiting influence of grain boundary scattering in the case of antimony doping. Sputter-deposited tantalum-doped films with lower than previously achieved resistivity 5.4 × 10−4 Wcm, carrier density 4.5 × 1020 cm−3, and mobility 25.7 cm2 Vs−1 are reported, while maintaining optical transmittance above 85% at a film thickness 400 nm. Ta/Sb co-doped thin films were synthesized for the first time, achieving similar results. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 02 Feb 2016 15:53 |
| Letzte Änderung: | 12 Mai 2016 12:42 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum