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1,2-Dithiooxalato-Bridged Heterobimetallic Complexes as Single-Source Precursors for Ternary Metal Sulfide Semiconductors

Nowotny, Mathias ; Foro, Sabine ; Heinschke, Silvio ; Hoffmann, Rudolf C. ; Schneider, Jörg J. (2015)
1,2-Dithiooxalato-Bridged Heterobimetallic Complexes as Single-Source Precursors for Ternary Metal Sulfide Semiconductors.
In: European Journal of Inorganic Chemistry, 2015 (3)
doi: 10.1002/ejic.201402990
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The new 1,2-dithiooxalalo-bridged bimetallic Cu-Ga, Cu-In, and Cu-Sn complexes [[(Ph3P)(2)Cu(mu-S2C2O2)}(3)Ga] (1), [{(Ph3P)(2)Cu(mu-S2C2O2)}(3)In] (2), [(Ph3P)(2)Cu(mu-S2C2O2)In-(S2CNEt2)(2)] (3), and [{(Ph3P)(2)Cu(mu-S2C2O2)}(2)Sn(S2C2O2)] (4) were prepared and spectroscopically fully characterized. The crystal structures of 2-4 are presented. Complexes 3 and 4 are potential molecular single-source precursors (SSP) for the ternary semiconductors CuInS2 and Cu2SnS3, respectively, which can be manipulated under ambient conditions. Indeed, a study or the thermal degradation of 3 and 4 revealed that 3 affords pure nanoscaled CuInS2 (mean diameter ca. 2 rim) when the decomposition is carried out in an oleyla.mine solution by using a hot-injection or arrested-precipitation technique at temperatures well below 250 degrees C. In contrast, 4 decomposes under the same reaction conditions in an ambiguous mariner and forms mixed binary chalcogenide phases. This can be explained by a subtle influence of the relative stability of possible Sn-II and Sn-IV intermediates in the case of SSP [{(Ph3P)(2)Cu(mu-S2C2O2)}(2)Sn(S2C2O2)] (4).

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Nowotny, Mathias ; Foro, Sabine ; Heinschke, Silvio ; Hoffmann, Rudolf C. ; Schneider, Jörg J.
Art des Eintrags: Bibliographie
Titel: 1,2-Dithiooxalato-Bridged Heterobimetallic Complexes as Single-Source Precursors for Ternary Metal Sulfide Semiconductors
Sprache: Englisch
Publikationsjahr: Januar 2015
Verlag: WILEY-V C H VERLAG GMBH
Titel der Zeitschrift, Zeitung oder Schriftenreihe: European Journal of Inorganic Chemistry
Jahrgang/Volume einer Zeitschrift: 2015
(Heft-)Nummer: 3
DOI: 10.1002/ejic.201402990
Kurzbeschreibung (Abstract):

The new 1,2-dithiooxalalo-bridged bimetallic Cu-Ga, Cu-In, and Cu-Sn complexes [[(Ph3P)(2)Cu(mu-S2C2O2)}(3)Ga] (1), [{(Ph3P)(2)Cu(mu-S2C2O2)}(3)In] (2), [(Ph3P)(2)Cu(mu-S2C2O2)In-(S2CNEt2)(2)] (3), and [{(Ph3P)(2)Cu(mu-S2C2O2)}(2)Sn(S2C2O2)] (4) were prepared and spectroscopically fully characterized. The crystal structures of 2-4 are presented. Complexes 3 and 4 are potential molecular single-source precursors (SSP) for the ternary semiconductors CuInS2 and Cu2SnS3, respectively, which can be manipulated under ambient conditions. Indeed, a study or the thermal degradation of 3 and 4 revealed that 3 affords pure nanoscaled CuInS2 (mean diameter ca. 2 rim) when the decomposition is carried out in an oleyla.mine solution by using a hot-injection or arrested-precipitation technique at temperatures well below 250 degrees C. In contrast, 4 decomposes under the same reaction conditions in an ambiguous mariner and forms mixed binary chalcogenide phases. This can be explained by a subtle influence of the relative stability of possible Sn-II and Sn-IV intermediates in the case of SSP [{(Ph3P)(2)Cu(mu-S2C2O2)}(2)Sn(S2C2O2)] (4).

Freie Schlagworte: Semiconductors, Copper, Indium, Tin, Heterometallic complexes, Single source precursor
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung
07 Fachbereich Chemie
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 21 Jan 2016 09:48
Letzte Änderung: 21 Jan 2016 09:48
PPN:
Sponsoren: This work was carried out within joint research project with EMD Performance Materials (owned by Merck KGaA, 300 2nd Ave., Waltham, Massachusetts 02451, USA)., TEM measurements were carried out at the Ernst-Ruska-Center Julich by Dr. Engstler (TUDA) under contract number ERC-TUD1
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