Regensburger, Stefan ; Mittendorff, Martin ; Winnerl, Stephan ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha (2015)
Symmetry effects in broadband, room-temperature field effect transistor THz detectors.
In: 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
doi: 10.1109/IRMMW-THz.2015.7327721
Buchkapitel, Bibliographie
Kurzbeschreibung (Abstract)
Rectifying large area field-effect transistors (LA-FETs) are excellently suited for aligning high power pump-probe experiments. They offer the possibility of single-shot measurements, as well as the simultaneous measurement of optical near infrared pulses and their respective temporal delay. This paper studies the phase of the rectified signal of LA-FET detectors for low (~100 GHz) and high (~3.9 THz) THz frequencies. At low frequencies, the sign of the rectified current can be inverted by a source-gate bias while at high frequencies the sign remains constant.
| Typ des Eintrags: | Buchkapitel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Regensburger, Stefan ; Mittendorff, Martin ; Winnerl, Stephan ; Lu, Hong ; Gossard, Arthur C. ; Preu, Sascha |
| Art des Eintrags: | Bibliographie |
| Titel: | Symmetry effects in broadband, room-temperature field effect transistor THz detectors |
| Sprache: | Englisch |
| Publikationsjahr: | 2015 |
| Ort: | Hongkong, China |
| Verlag: | IEEE |
| Buchtitel: | 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) |
| DOI: | 10.1109/IRMMW-THz.2015.7327721 |
| Kurzbeschreibung (Abstract): | Rectifying large area field-effect transistors (LA-FETs) are excellently suited for aligning high power pump-probe experiments. They offer the possibility of single-shot measurements, as well as the simultaneous measurement of optical near infrared pulses and their respective temporal delay. This paper studies the phase of the rectified signal of LA-FET detectors for low (~100 GHz) and high (~3.9 THz) THz frequencies. At low frequencies, the sign of the rectified current can be inverted by a source-gate bias while at high frequencies the sign remains constant. |
| Zusätzliche Informationen: | 23-28 August 2015 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems |
| Hinterlegungsdatum: | 23 Nov 2015 15:10 |
| Letzte Änderung: | 28 Mai 2024 11:26 |
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