Niu, Chengwang ; Bihlmayer, Gustav ; Zhang, Hongbin ; Wortmann, Daniel ; Blügel, Stefan ; Mokrousov, Yuriy (2015)
Functionalized bismuth films: Giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states.
In: Physical Review B, 91 (4)
doi: 10.1103/PhysRevB.91.041303
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first-principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies in both the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of a quantum valley Hall state, thus intrinsically realizing the so-called valley-polarized QAH effect. We further investigate the possibility of large gap QSH and QAH states in an H-decorated Bi((1) over bar 10) film and X-decorated (X = F, Cl, Br, and I) Bi(111) films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Niu, Chengwang ; Bihlmayer, Gustav ; Zhang, Hongbin ; Wortmann, Daniel ; Blügel, Stefan ; Mokrousov, Yuriy |
| Art des Eintrags: | Bibliographie |
| Titel: | Functionalized bismuth films: Giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states |
| Sprache: | Englisch |
| Publikationsjahr: | 20 Januar 2015 |
| Verlag: | APS Publications |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
| Jahrgang/Volume einer Zeitschrift: | 91 |
| (Heft-)Nummer: | 4 |
| DOI: | 10.1103/PhysRevB.91.041303 |
| Kurzbeschreibung (Abstract): | The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first-principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies in both the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of a quantum valley Hall state, thus intrinsically realizing the so-called valley-polarized QAH effect. We further investigate the possibility of large gap QSH and QAH states in an H-decorated Bi((1) over bar 10) film and X-decorated (X = F, Cl, Br, and I) Bi(111) films. |
| Freie Schlagworte: | SINGLE DIRAC CONE, TOPOLOGICAL INSULATORS, SURFACE, WELLS, PHASE |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Theorie magnetischer Materialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 02 Jul 2015 08:14 |
| Letzte Änderung: | 02 Jul 2015 11:35 |
| PPN: | |
| Sponsoren: | This work was supported by the Priority Program 1666 of the German Research Foundation (DFG) and Project No. VH-NG-513 of the Helmholtz Association (HGF). |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum