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On the finite semiconductor thickness effect applied to large area emitters devices for THz radiation

Garcia-Munoz, L. E. and Montero-de-Paz, J. and Ugarte-Munoz, E. and Rivera-Lavado, A. and Mendez-Aller, M. and Segovia-Vargas, D. and Dohler, G. H. and Preu, Sascha and Malzer, S. and Bauerschmidt, S. and Müller, C. and Gonzalez-Ovejero, D. (2014):
On the finite semiconductor thickness effect applied to large area emitters devices for THz radiation.
In: Microwave Conference (EuMC), 2014 44th European, [Online-Edition: http://dx.doi.org/10.1109/EuMC.2014.6986559],
[Conference or Workshop Item]

Abstract

Arrays of coherently driven photomixers with antenna (antenna emitter arrays, AEAs) have been evaluated as a possibility to overcome the power limitations of individual conventional photomixers with antenna (antenna emitters, AEs) for the generation of CW THz radiation. In this paper, large area emitters (LAEs) are proposed as an alternative approach. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in favorable radiation profiles without side lobes. Moreover, the achievable THz power is expected to outnumber even large AEAs. Last not least, the technological challenge of fabricating LAEs appears to be significantly less demanding. The radiation pattern of a vertical LAE is shown from 0.1 THz up to 1 THz.

Item Type: Conference or Workshop Item
Erschienen: 2014
Creators: Garcia-Munoz, L. E. and Montero-de-Paz, J. and Ugarte-Munoz, E. and Rivera-Lavado, A. and Mendez-Aller, M. and Segovia-Vargas, D. and Dohler, G. H. and Preu, Sascha and Malzer, S. and Bauerschmidt, S. and Müller, C. and Gonzalez-Ovejero, D.
Title: On the finite semiconductor thickness effect applied to large area emitters devices for THz radiation
Language: English
Abstract:

Arrays of coherently driven photomixers with antenna (antenna emitter arrays, AEAs) have been evaluated as a possibility to overcome the power limitations of individual conventional photomixers with antenna (antenna emitters, AEs) for the generation of CW THz radiation. In this paper, large area emitters (LAEs) are proposed as an alternative approach. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in favorable radiation profiles without side lobes. Moreover, the achievable THz power is expected to outnumber even large AEAs. Last not least, the technological challenge of fabricating LAEs appears to be significantly less demanding. The radiation pattern of a vertical LAE is shown from 0.1 THz up to 1 THz.

Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Conference (EuMC), 2014 44th European
Date Deposited: 19 Jun 2015 11:30
Official URL: http://dx.doi.org/10.1109/EuMC.2014.6986559
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