Schader, Florian H. ; Morozov, Maxim ; Wefring, Espen T. ; Grande, Tor ; Webber, Kyle G. (2015)
Mechanical stability of piezoelectric properties in ferroelectric perovskites.
In: Journal of Applied Physics, 117 (19)
doi: 10.1063/1.4919815
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The influence of uniaxial compressive stress on the small signal direct piezoelectric coefficient of hard and soft Pb(Zr,Ti)O3 at the morphotropic phase boundary was investigated as a function of temperature from 25 °C to 450 °C. The stress- and temperature-dependent piezoelectric data indicate that stress is capable of either directly or indirectly modifying the orientation of polar defects in the crystal lattice and reduce the internal bias field. At higher temperatures, the mobility of polar defects was found to increase, corresponding to a two-step decrease in the direct piezoelectric coefficient and a decrease in the frequency dispersion. Quenching experiments were used to elucidate the role of the internal bias field on the stress-dependent piezoelectric response.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2015 |
Autor(en): | Schader, Florian H. ; Morozov, Maxim ; Wefring, Espen T. ; Grande, Tor ; Webber, Kyle G. |
Art des Eintrags: | Bibliographie |
Titel: | Mechanical stability of piezoelectric properties in ferroelectric perovskites |
Sprache: | Englisch |
Publikationsjahr: | 21 Mai 2015 |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
Jahrgang/Volume einer Zeitschrift: | 117 |
(Heft-)Nummer: | 19 |
DOI: | 10.1063/1.4919815 |
Kurzbeschreibung (Abstract): | The influence of uniaxial compressive stress on the small signal direct piezoelectric coefficient of hard and soft Pb(Zr,Ti)O3 at the morphotropic phase boundary was investigated as a function of temperature from 25 °C to 450 °C. The stress- and temperature-dependent piezoelectric data indicate that stress is capable of either directly or indirectly modifying the orientation of polar defects in the crystal lattice and reduce the internal bias field. At higher temperatures, the mobility of polar defects was found to increase, corresponding to a two-step decrease in the direct piezoelectric coefficient and a decrease in the frequency dispersion. Quenching experiments were used to elucidate the role of the internal bias field on the stress-dependent piezoelectric response. |
Freie Schlagworte: | Piezoelectric fields; Piezoelectric transducers; Domain walls; Piezoelectric materials; Polarization |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektromechanik von Oxiden 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
Hinterlegungsdatum: | 27 Mai 2015 08:12 |
Letzte Änderung: | 27 Mai 2015 08:15 |
PPN: | |
Sponsoren: | F.H.S. and K.G.W. gratefully acknowledge financial support from the Deutsche Forschungsgemeinschaft under WE 4972/1-1 and WE 4972/2-1. |
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