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Mechanical stability of piezoelectric properties in ferroelectric perovskites

Schader, Florian H. ; Morozov, Maxim ; Wefring, Espen T. ; Grande, Tor ; Webber, Kyle G. (2015)
Mechanical stability of piezoelectric properties in ferroelectric perovskites.
In: Journal of Applied Physics, 117 (19)
doi: 10.1063/1.4919815
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The influence of uniaxial compressive stress on the small signal direct piezoelectric coefficient of hard and soft Pb(Zr,Ti)O3 at the morphotropic phase boundary was investigated as a function of temperature from 25 °C to 450 °C. The stress- and temperature-dependent piezoelectric data indicate that stress is capable of either directly or indirectly modifying the orientation of polar defects in the crystal lattice and reduce the internal bias field. At higher temperatures, the mobility of polar defects was found to increase, corresponding to a two-step decrease in the direct piezoelectric coefficient and a decrease in the frequency dispersion. Quenching experiments were used to elucidate the role of the internal bias field on the stress-dependent piezoelectric response.

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Schader, Florian H. ; Morozov, Maxim ; Wefring, Espen T. ; Grande, Tor ; Webber, Kyle G.
Art des Eintrags: Bibliographie
Titel: Mechanical stability of piezoelectric properties in ferroelectric perovskites
Sprache: Englisch
Publikationsjahr: 21 Mai 2015
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Physics
Jahrgang/Volume einer Zeitschrift: 117
(Heft-)Nummer: 19
DOI: 10.1063/1.4919815
Kurzbeschreibung (Abstract):

The influence of uniaxial compressive stress on the small signal direct piezoelectric coefficient of hard and soft Pb(Zr,Ti)O3 at the morphotropic phase boundary was investigated as a function of temperature from 25 °C to 450 °C. The stress- and temperature-dependent piezoelectric data indicate that stress is capable of either directly or indirectly modifying the orientation of polar defects in the crystal lattice and reduce the internal bias field. At higher temperatures, the mobility of polar defects was found to increase, corresponding to a two-step decrease in the direct piezoelectric coefficient and a decrease in the frequency dispersion. Quenching experiments were used to elucidate the role of the internal bias field on the stress-dependent piezoelectric response.

Freie Schlagworte: Piezoelectric fields; Piezoelectric transducers; Domain walls; Piezoelectric materials; Polarization
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektromechanik von Oxiden
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 27 Mai 2015 08:12
Letzte Änderung: 27 Mai 2015 08:15
PPN:
Sponsoren: F.H.S. and K.G.W. gratefully acknowledge financial support from the Deutsche Forschungsgemeinschaft under WE 4972/1-1 and WE 4972/2-1.
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