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Dimensional crossover in ultrathin buried conducting SrVO3 layers

Li, Q.-R. ; Major, M. ; Yazdi, M. Baghaie ; Donner, W. ; Dao, V. H. ; Mercey, B. ; Lüders, U. (2015)
Dimensional crossover in ultrathin buried conducting SrVO3 layers.
In: Physical Review B, 91 (3)
doi: 10.1103/PhysRevB.91.035420
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.

Typ des Eintrags: Artikel
Erschienen: 2015
Autor(en): Li, Q.-R. ; Major, M. ; Yazdi, M. Baghaie ; Donner, W. ; Dao, V. H. ; Mercey, B. ; Lüders, U.
Art des Eintrags: Bibliographie
Titel: Dimensional crossover in ultrathin buried conducting SrVO3 layers
Sprache: Englisch
Publikationsjahr: 15 Januar 2015
Verlag: APS Publications
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 91
(Heft-)Nummer: 3
DOI: 10.1103/PhysRevB.91.035420
Kurzbeschreibung (Abstract):

The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 21 Apr 2015 10:49
Letzte Änderung: 25 Jan 2016 12:10
PPN:
Sponsoren: This work is financially supported by Conseil Régional de Basse Normandie, France and also guided in the framework of the Erasmus-Mundus International Doctoral School in Functional Materials (IDS FunMat).
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