Adler, Tobias ; Botros, Miriam ; Witte, Wolfram ; Hariskos, Dimitrios ; Menner, Richard ; Powalla, Michael ; Klein, Andreas (2014)
Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces.
In: physica status solidi (a), 211 (9)
doi: 10.1002/pssa.201330353
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which are important for thin-film solar cells, are considered. Valence band offsets derived from X-ray photoelectron spectroscopy for Cu(In,Ga)Se2 absorber layers with CdS and Zn(O,S) compounds are compared to theoretical predictions. It is shown that the valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces approximately follow the theoretical prediction and vary significantly from sample to sample. The integral sulfide content of chemical bath deposited Zn(O,S) is reproducibly found to be 50–70%, fortuitously resulting in a conduction band offset suitable for solar cell applications with Cu(In,Ga)Se2 absorber materials. The observed variation in offset can neither be explained by variation of the Cu content in the Cu(In,Ga)Se2 near the interface nor by local variation of the chemical composition. Fermi level pinning induced by high defect concentrations is a possible origin of the variation of band offset.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Adler, Tobias ; Botros, Miriam ; Witte, Wolfram ; Hariskos, Dimitrios ; Menner, Richard ; Powalla, Michael ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces |
| Sprache: | Englisch |
| Publikationsjahr: | September 2014 |
| Verlag: | WILEY-VCH Verlag GmbH & Co. KGaA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (a) |
| Jahrgang/Volume einer Zeitschrift: | 211 |
| (Heft-)Nummer: | 9 |
| DOI: | 10.1002/pssa.201330353 |
| Kurzbeschreibung (Abstract): | The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which are important for thin-film solar cells, are considered. Valence band offsets derived from X-ray photoelectron spectroscopy for Cu(In,Ga)Se2 absorber layers with CdS and Zn(O,S) compounds are compared to theoretical predictions. It is shown that the valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces approximately follow the theoretical prediction and vary significantly from sample to sample. The integral sulfide content of chemical bath deposited Zn(O,S) is reproducibly found to be 50–70%, fortuitously resulting in a conduction band offset suitable for solar cell applications with Cu(In,Ga)Se2 absorber materials. The observed variation in offset can neither be explained by variation of the Cu content in the Cu(In,Ga)Se2 near the interface nor by local variation of the chemical composition. Fermi level pinning induced by high defect concentrations is a possible origin of the variation of band offset. |
| Freie Schlagworte: | buffer layers, Cu(In,Ga)Se2, photoemission, valence band offset, ZnO, ZnS |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 27 Feb 2015 13:11 |
| Letzte Änderung: | 29 Mär 2015 17:16 |
| PPN: | |
| Sponsoren: | Funded by the German Bundesministerium für Bildung und Forschung (BMBF). Grant Number: 03SF0359 |
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