Lebedev, Mikhail V. ; Calvet, Wolfram ; Mayer, Thomas ; Jaegermann, Wolfram (2014)
Photoelectrochemical Processes at n-GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes.
In: The Journal of Physical Chemistry C, 118 (24)
doi: 10.1021/jp500564c
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemical and photoelectrochemical corrosion reactions at the liquid junction n‑GaAs(100)/1 M aqueous HCl solution. Under anodic polarization of 1.8 eV, the main process initiated by the presence of holes in the Ga−As bonding states of the valence band is the formation of soluble gallium chloride complexes and insoluble elemental arsenic on the surface. In addition, arsenic hydroxide forms, which reacts further to soluble HAsO2. In toto, the As/Ga atomic ratio increases, which is accompanied by an increase of the work function. The anodic decomposition reaction is enhanced by illumination as more holes reach the n-semiconductor/electrolyte junction. Under cathodic polarization of 1.5 eV, only minor changes are observed in Ga and As core-level spectra, giving no indication of corrosion, but specific adsorption of hydrated HCl molecules and/or Cl −ions considerably modifies valence bandspectra.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Lebedev, Mikhail V. ; Calvet, Wolfram ; Mayer, Thomas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Photoelectrochemical Processes at n-GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes |
| Sprache: | Englisch |
| Publikationsjahr: | 19 Juni 2014 |
| Verlag: | ACS Publications |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | The Journal of Physical Chemistry C |
| Jahrgang/Volume einer Zeitschrift: | 118 |
| (Heft-)Nummer: | 24 |
| DOI: | 10.1021/jp500564c |
| Kurzbeschreibung (Abstract): | High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemical and photoelectrochemical corrosion reactions at the liquid junction n‑GaAs(100)/1 M aqueous HCl solution. Under anodic polarization of 1.8 eV, the main process initiated by the presence of holes in the Ga−As bonding states of the valence band is the formation of soluble gallium chloride complexes and insoluble elemental arsenic on the surface. In addition, arsenic hydroxide forms, which reacts further to soluble HAsO2. In toto, the As/Ga atomic ratio increases, which is accompanied by an increase of the work function. The anodic decomposition reaction is enhanced by illumination as more holes reach the n-semiconductor/electrolyte junction. Under cathodic polarization of 1.5 eV, only minor changes are observed in Ga and As core-level spectra, giving no indication of corrosion, but specific adsorption of hydrated HCl molecules and/or Cl −ions considerably modifies valence bandspectra. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 26 Feb 2015 10:15 |
| Letzte Änderung: | 29 Mär 2015 16:18 |
| PPN: | |
| Sponsoren: | This work was supported in part by Russian Foundation for Basic Research (Project 13-02-00540). |
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