Weidner, Mirko ; Broetz, Joachim ; Klein, Andreas (2014)
Sputter-deposited polycrystalline tantalum-doped SnO2 layers.
In: Thin Solid Films, 555
doi: 10.1016/j.tsf.2013.05.147
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on amorphous fused silica substrates by RF-magnetron sputter deposition. Electrical and optical properties were subsequently measured and analyzed as a function of deposition temperature (300 to 700 °C) and oxygen ratio in the process gas (0 to 50%). In situ photoelectron spectroscopy was used to determine tantalum incorporation, sample stoichiometry, valence band electronic structure and Fermi level position. Samples were analyzed with respect to their optical and electrical characteristics by spectral transmittance and Hall measurement. Electrical resistivity reached values as low as 1.7 × 10− 3 Ω cm with a charge carrier density of 3.3 × 1020 cm− 3 and a mobility of 12 cm2 V− 1 s− 1. Electrical transport properties were related to structural properties as determined by atomic force microscopy, scanning electron microscopy and X-ray diffraction. It was found that electrical properties are a strong function of substrate temperature, mainly due to a reduced charge carrier density for deposition temperatures below 700 °C. This is thought to be caused by an intrinsic compensation mechanism which has not yet been identified.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Weidner, Mirko ; Broetz, Joachim ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Sputter-deposited polycrystalline tantalum-doped SnO2 layers |
| Sprache: | Englisch |
| Publikationsjahr: | 31 März 2014 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Thin Solid Films |
| Jahrgang/Volume einer Zeitschrift: | 555 |
| DOI: | 10.1016/j.tsf.2013.05.147 |
| Kurzbeschreibung (Abstract): | In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on amorphous fused silica substrates by RF-magnetron sputter deposition. Electrical and optical properties were subsequently measured and analyzed as a function of deposition temperature (300 to 700 °C) and oxygen ratio in the process gas (0 to 50%). In situ photoelectron spectroscopy was used to determine tantalum incorporation, sample stoichiometry, valence band electronic structure and Fermi level position. Samples were analyzed with respect to their optical and electrical characteristics by spectral transmittance and Hall measurement. Electrical resistivity reached values as low as 1.7 × 10− 3 Ω cm with a charge carrier density of 3.3 × 1020 cm− 3 and a mobility of 12 cm2 V− 1 s− 1. Electrical transport properties were related to structural properties as determined by atomic force microscopy, scanning electron microscopy and X-ray diffraction. It was found that electrical properties are a strong function of substrate temperature, mainly due to a reduced charge carrier density for deposition temperatures below 700 °C. This is thought to be caused by an intrinsic compensation mechanism which has not yet been identified. |
| Freie Schlagworte: | Transparent conducting oxide, Tin oxide, SnO2, Ta doped, Sputter deposition, XPS, Defects |
| Zusätzliche Informationen: | International Symposia on Transparent Conductive Materials, October 2012. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 22 Jan 2015 10:35 |
| Letzte Änderung: | 29 Mär 2015 17:25 |
| PPN: | |
| Sponsoren: | The authors gratefully acknowledge support by the State of Hesse by means of funding through the LOEWE Research Center AdRIA. |
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