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Sputter-deposited polycrystalline tantalum-doped SnO2 layers

Weidner, Mirko and Broetz, Joachim and Klein, Andreas (2014):
Sputter-deposited polycrystalline tantalum-doped SnO2 layers.
In: Thin Solid Films, Elsevier Science Publishing, pp. 173-178, 555, ISSN 00406090, [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2013.05.147],
[Article]

Abstract

In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on amorphous fused silica substrates by RF-magnetron sputter deposition. Electrical and optical properties were subsequently measured and analyzed as a function of deposition temperature (300 to 700 °C) and oxygen ratio in the process gas (0 to 50%). In situ photoelectron spectroscopy was used to determine tantalum incorporation, sample stoichiometry, valence band electronic structure and Fermi level position. Samples were analyzed with respect to their optical and electrical characteristics by spectral transmittance and Hall measurement. Electrical resistivity reached values as low as 1.7 × 10− 3 Ω cm with a charge carrier density of 3.3 × 1020 cm− 3 and a mobility of 12 cm2 V− 1 s− 1. Electrical transport properties were related to structural properties as determined by atomic force microscopy, scanning electron microscopy and X-ray diffraction. It was found that electrical properties are a strong function of substrate temperature, mainly due to a reduced charge carrier density for deposition temperatures below 700 °C. This is thought to be caused by an intrinsic compensation mechanism which has not yet been identified.

Item Type: Article
Erschienen: 2014
Creators: Weidner, Mirko and Broetz, Joachim and Klein, Andreas
Title: Sputter-deposited polycrystalline tantalum-doped SnO2 layers
Language: English
Abstract:

In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on amorphous fused silica substrates by RF-magnetron sputter deposition. Electrical and optical properties were subsequently measured and analyzed as a function of deposition temperature (300 to 700 °C) and oxygen ratio in the process gas (0 to 50%). In situ photoelectron spectroscopy was used to determine tantalum incorporation, sample stoichiometry, valence band electronic structure and Fermi level position. Samples were analyzed with respect to their optical and electrical characteristics by spectral transmittance and Hall measurement. Electrical resistivity reached values as low as 1.7 × 10− 3 Ω cm with a charge carrier density of 3.3 × 1020 cm− 3 and a mobility of 12 cm2 V− 1 s− 1. Electrical transport properties were related to structural properties as determined by atomic force microscopy, scanning electron microscopy and X-ray diffraction. It was found that electrical properties are a strong function of substrate temperature, mainly due to a reduced charge carrier density for deposition temperatures below 700 °C. This is thought to be caused by an intrinsic compensation mechanism which has not yet been identified.

Journal or Publication Title: Thin Solid Films
Volume: 555
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: Transparent conducting oxide, Tin oxide, SnO2, Ta doped, Sputter deposition, XPS, Defects
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
11 Department of Materials and Earth Sciences > Material Science > Structure Research
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 22 Jan 2015 10:35
Official URL: http://dx.doi.org/10.1016/j.tsf.2013.05.147
Additional Information:

International Symposia on Transparent Conductive Materials, October 2012.

Identification Number: doi:10.1016/j.tsf.2013.05.147
Funders: The authors gratefully acknowledge support by the State of Hesse by means of funding through the LOEWE Research Center AdRIA.
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