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Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis

Li, Wenshan ; Pyatkov, Feliks ; Dehm, Simone ; Flavel, Benjamin S. ; Krupke, Ralph (2014)
Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis.
In: physica status solidi (b), 251 (12)
doi: 10.1002/pssb.201451280
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Dielectrophoresis (DEP) is an established method for the integration of solution-processed single-walled carbon nanotubes into nanoscale device structures. However, this method is less effective for small-diameter semiconducting nanotubes and leads to an enrichment of metallic tubes in multi-tube devices. In this work, we present the first results of a novel light-assisted DEP technique, which enhances the deposition of (6,5) semiconducting carbon nanotubes. Transistors fabricated with this technique show higher on/off ratios compared to transistors that were fabricated by conventional DEP. We explain this effect by an enhanced polarizability of the irradiated semiconducting nanotubes and discuss spontaneous and field-driven exciton dissociation as the underlying mechanism. Strategies to further improve the effect are also proposed.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Li, Wenshan ; Pyatkov, Feliks ; Dehm, Simone ; Flavel, Benjamin S. ; Krupke, Ralph
Art des Eintrags: Bibliographie
Titel: Deposition of semiconducting single-walled carbon nanotubes using light-assisted dielectrophoresis
Sprache: Englisch
Publikationsjahr: Dezember 2014
Verlag: WILEY-VCH Verlag GmbH & Co. KGaA
Titel der Zeitschrift, Zeitung oder Schriftenreihe: physica status solidi (b)
Jahrgang/Volume einer Zeitschrift: 251
(Heft-)Nummer: 12
DOI: 10.1002/pssb.201451280
Kurzbeschreibung (Abstract):

Dielectrophoresis (DEP) is an established method for the integration of solution-processed single-walled carbon nanotubes into nanoscale device structures. However, this method is less effective for small-diameter semiconducting nanotubes and leads to an enrichment of metallic tubes in multi-tube devices. In this work, we present the first results of a novel light-assisted DEP technique, which enhances the deposition of (6,5) semiconducting carbon nanotubes. Transistors fabricated with this technique show higher on/off ratios compared to transistors that were fabricated by conventional DEP. We explain this effect by an enhanced polarizability of the irradiated semiconducting nanotubes and discuss spontaneous and field-driven exciton dissociation as the underlying mechanism. Strategies to further improve the effect are also proposed.

Freie Schlagworte: dielectrophoresis, exciton dissociation, nanotube, polarizability
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 08 Jan 2015 12:12
Letzte Änderung: 08 Jan 2015 12:12
PPN:
Sponsoren: Funded by Helmholtz Research Program Science and Technology of Nanosystems (STN), Funded by Deutsche Forschungsgemeinschaft's Emmy Noether Program. Grant Number: FL 834/1-1
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