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Intrinsic energy band alignment of functional oxides

Li, Shunyi and Chen, Feng and Schafranek, Robert and Bayer, Thorsten J. M. and Rachut, Karsten and Fuchs, Anne and Siol, Sebastian and Weidner, Mirko and Hohmann, Mareike and Pfeifer, Verena and Morasch, Jan and Ghinea, Cosmina and Arveux, Emmanuel and Günzler, Richard and Gassmann, Jürgen and Körber, Christoph and Gassenbauer, Yvonne and Säuberlich, Frank and Rao, Gutlapalli Venkata and Payan, Sandrine and Maglione, Mario and Chirila, Cristina and Pintilie, Lucian and Jia, Lichao and Ellmer, Klaus and Naderer, Michael and Reichmann, Klaus and Böttger, Ulrich and Schmelzer, Sebastian and Frunza, Raluca C. and Uršič, Hana and Malič, Barbara and Wu, Wen-Bin and Erhart, Paul and Klein, Andreas (2014):
Intrinsic energy band alignment of functional oxides.
In: physica status solidi (RRL) - Rapid Research Letters, pp. 571-576, 8, (6), ISSN 18626254,
[Online-Edition: http://dx.doi.org/10.1002/pssr.201409034],
[Article]

Abstract

The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Item Type: Article
Erschienen: 2014
Creators: Li, Shunyi and Chen, Feng and Schafranek, Robert and Bayer, Thorsten J. M. and Rachut, Karsten and Fuchs, Anne and Siol, Sebastian and Weidner, Mirko and Hohmann, Mareike and Pfeifer, Verena and Morasch, Jan and Ghinea, Cosmina and Arveux, Emmanuel and Günzler, Richard and Gassmann, Jürgen and Körber, Christoph and Gassenbauer, Yvonne and Säuberlich, Frank and Rao, Gutlapalli Venkata and Payan, Sandrine and Maglione, Mario and Chirila, Cristina and Pintilie, Lucian and Jia, Lichao and Ellmer, Klaus and Naderer, Michael and Reichmann, Klaus and Böttger, Ulrich and Schmelzer, Sebastian and Frunza, Raluca C. and Uršič, Hana and Malič, Barbara and Wu, Wen-Bin and Erhart, Paul and Klein, Andreas
Title: Intrinsic energy band alignment of functional oxides
Language: English
Abstract:

The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Journal or Publication Title: physica status solidi (RRL) - Rapid Research Letters
Volume: 8
Number: 6
Uncontrolled Keywords: energy band alignment; functional oxides; transitivity; electronic structure; photoelectron spectroscopy
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 15 Dec 2014 09:31
Official URL: http://dx.doi.org/10.1002/pssr.201409034
Additional Information:

SFB 595 B7

Identification Number: doi:10.1002/pssr.201409034
Funders: German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials), Research Training Group (GRK 1037) TICMO (Tunable Integrated Components for Microwaves and Optics), state of Hessen within the LOEWE center AdRIA (Adaptronik-Research, Innovation, Application), Slovenian Research Agency (Project P2-0105, 1000-10-310134 and J2-4173), Romanian Ministry of National Education-UEFISCDI (Project PN-II-ID-PCCE-2011-2-0006, contract no. 3/2012).
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