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Intrinsic energy band alignment of functional oxides

Li, Shunyi ; Chen, Feng ; Schafranek, Robert ; Bayer, Thorsten J. M. ; Rachut, Karsten ; Fuchs, Anne ; Siol, Sebastian ; Weidner, Mirko ; Hohmann, Mareike ; Pfeifer, Verena ; Morasch, Jan ; Ghinea, Cosmina ; Arveux, Emmanuel ; Günzler, Richard ; Gassmann, Jürgen ; Körber, Christoph ; Gassenbauer, Yvonne ; Säuberlich, Frank ; Rao, Gutlapalli Venkata ; Payan, Sandrine ; Maglione, Mario ; Chirila, Cristina ; Pintilie, Lucian ; Jia, Lichao ; Ellmer, Klaus ; Naderer, Michael ; Reichmann, Klaus ; Böttger, Ulrich ; Schmelzer, Sebastian ; Frunza, Raluca C. ; Uršič, Hana ; Malič, Barbara ; Wu, Wen-Bin ; Erhart, Paul ; Klein, Andreas (2014)
Intrinsic energy band alignment of functional oxides.
In: physica status solidi (RRL) - Rapid Research Letters, 8 (6)
doi: 10.1002/pssr.201409034
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Li, Shunyi ; Chen, Feng ; Schafranek, Robert ; Bayer, Thorsten J. M. ; Rachut, Karsten ; Fuchs, Anne ; Siol, Sebastian ; Weidner, Mirko ; Hohmann, Mareike ; Pfeifer, Verena ; Morasch, Jan ; Ghinea, Cosmina ; Arveux, Emmanuel ; Günzler, Richard ; Gassmann, Jürgen ; Körber, Christoph ; Gassenbauer, Yvonne ; Säuberlich, Frank ; Rao, Gutlapalli Venkata ; Payan, Sandrine ; Maglione, Mario ; Chirila, Cristina ; Pintilie, Lucian ; Jia, Lichao ; Ellmer, Klaus ; Naderer, Michael ; Reichmann, Klaus ; Böttger, Ulrich ; Schmelzer, Sebastian ; Frunza, Raluca C. ; Uršič, Hana ; Malič, Barbara ; Wu, Wen-Bin ; Erhart, Paul ; Klein, Andreas
Art des Eintrags: Bibliographie
Titel: Intrinsic energy band alignment of functional oxides
Sprache: Englisch
Publikationsjahr: Juni 2014
Titel der Zeitschrift, Zeitung oder Schriftenreihe: physica status solidi (RRL) - Rapid Research Letters
Jahrgang/Volume einer Zeitschrift: 8
(Heft-)Nummer: 6
DOI: 10.1002/pssr.201409034
Kurzbeschreibung (Abstract):

The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Freie Schlagworte: energy band alignment; functional oxides; transitivity; electronic structure; photoelectron spectroscopy
Zusätzliche Informationen:

SFB 595 B7

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung > Teilprojekt B7:Polarisation und Ladung in elektrisch ermüdeten Ferroelektrika
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
DFG-Sonderforschungsbereiche (inkl. Transregio)
Hinterlegungsdatum: 15 Dez 2014 09:31
Letzte Änderung: 29 Mär 2015 17:20
PPN:
Sponsoren: German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials), Research Training Group (GRK 1037) TICMO (Tunable Integrated Components for Microwaves and Optics), state of Hessen within the LOEWE center AdRIA (Adaptronik-Research, Innovation, Application), Slovenian Research Agency (Project P2-0105, 1000-10-310134 and J2-4173), Romanian Ministry of National Education-UEFISCDI (Project PN-II-ID-PCCE-2011-2-0006, contract no. 3/2012).
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