Li, Shunyi ; Chen, Feng ; Schafranek, Robert ; Bayer, Thorsten J. M. ; Rachut, Karsten ; Fuchs, Anne ; Siol, Sebastian ; Weidner, Mirko ; Hohmann, Mareike ; Pfeifer, Verena ; Morasch, Jan ; Ghinea, Cosmina ; Arveux, Emmanuel ; Günzler, Richard ; Gassmann, Jürgen ; Körber, Christoph ; Gassenbauer, Yvonne ; Säuberlich, Frank ; Rao, Gutlapalli Venkata ; Payan, Sandrine ; Maglione, Mario ; Chirila, Cristina ; Pintilie, Lucian ; Jia, Lichao ; Ellmer, Klaus ; Naderer, Michael ; Reichmann, Klaus ; Böttger, Ulrich ; Schmelzer, Sebastian ; Frunza, Raluca C. ; Uršič, Hana ; Malič, Barbara ; Wu, Wen-Bin ; Erhart, Paul ; Klein, Andreas (2014)
Intrinsic energy band alignment of functional oxides.
In: physica status solidi (RRL) - Rapid Research Letters, 8 (6)
doi: 10.1002/pssr.201409034
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Li, Shunyi ; Chen, Feng ; Schafranek, Robert ; Bayer, Thorsten J. M. ; Rachut, Karsten ; Fuchs, Anne ; Siol, Sebastian ; Weidner, Mirko ; Hohmann, Mareike ; Pfeifer, Verena ; Morasch, Jan ; Ghinea, Cosmina ; Arveux, Emmanuel ; Günzler, Richard ; Gassmann, Jürgen ; Körber, Christoph ; Gassenbauer, Yvonne ; Säuberlich, Frank ; Rao, Gutlapalli Venkata ; Payan, Sandrine ; Maglione, Mario ; Chirila, Cristina ; Pintilie, Lucian ; Jia, Lichao ; Ellmer, Klaus ; Naderer, Michael ; Reichmann, Klaus ; Böttger, Ulrich ; Schmelzer, Sebastian ; Frunza, Raluca C. ; Uršič, Hana ; Malič, Barbara ; Wu, Wen-Bin ; Erhart, Paul ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Intrinsic energy band alignment of functional oxides |
| Sprache: | Englisch |
| Publikationsjahr: | Juni 2014 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (RRL) - Rapid Research Letters |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 6 |
| DOI: | 10.1002/pssr.201409034 |
| Kurzbeschreibung (Abstract): | The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental studies on oxides are still missing. This work presents an extensive study on the intrinsic energy band alignment of a wide range of functional oxides using photoelectron spectroscopy with in-situ sample preparation. The studied materials have particular technological importance in diverse fields as solar cells, piezotronics, multiferroics, photo-electrochemistry and oxide electronics. Particular efforts have been made to verify the validity of transitivity, in order to confirm the intrinsic nature of the obtained band alignment and to understand the underlying principles. Valence band offsets up to 1.6 eV are observed. The large variation of valence band maximum energy can be explained by the different orbital contributions to the density of states in the valence band. The framework provided by this work enables the general understanding and prediction of energy band alignment at oxide interfaces, and furthermore the tailoring of energy level matching for charge transfer in functional oxides. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Freie Schlagworte: | energy band alignment; functional oxides; transitivity; electronic structure; photoelectron spectroscopy |
| Zusätzliche Informationen: | SFB 595 B7 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung > Teilprojekt B7:Polarisation und Ladung in elektrisch ermüdeten Ferroelektrika 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 15 Dez 2014 09:31 |
| Letzte Änderung: | 29 Mär 2015 17:20 |
| PPN: | |
| Sponsoren: | German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials), Research Training Group (GRK 1037) TICMO (Tunable Integrated Components for Microwaves and Optics), state of Hessen within the LOEWE center AdRIA (Adaptronik-Research, Innovation, Application), Slovenian Research Agency (Project P2-0105, 1000-10-310134 and J2-4173), Romanian Ministry of National Education-UEFISCDI (Project PN-II-ID-PCCE-2011-2-0006, contract no. 3/2012). |
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