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Thick-film Barium-Strontium-Titantate varactors for RF power transistors

Wiens, A. and Bengtsson, O. and Maune, H. and Sazegar, M. and Heinrich, W. and Jakoby, R. (2013):
Thick-film Barium-Strontium-Titantate varactors for RF power transistors.
In: Microwave Conference (EuMC), 2013 European, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2013
Creators: Wiens, A. and Bengtsson, O. and Maune, H. and Sazegar, M. and Heinrich, W. and Jakoby, R.
Title: Thick-film Barium-Strontium-Titantate varactors for RF power transistors
Language: German
Uncontrolled Keywords: barium compounds;gallium compounds;high electron mobility transistors;power transistors;thick film devices;varactors;wide band gap semiconductors;GaN;HEMT;RF power transistors;barium-strontium-titanate based thick-film varactors;gain shift;gallium nitride;large-signal environment;packaged RF power transistor;prematching shunt varactor;small- signal environment;thermal conditions;thermal dependency;thick-film barium-strontium-titantate varactors;tunable pre-matching transistor assembly;varactor bias voltage;Gain;Microwave transistors;Radio frequency;Temperature;Temperature measurement;Transistors;Varactors;BST;ferroelectrics;nonlinear devices;power amplifier
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Conference (EuMC), 2013 European
Date Deposited: 08 Dec 2014 13:06
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