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RF-power GaN transistors with tunable BST pre-matching

Bengtsson, O. and Maune, H. and Wiens, A. and Chevtchenko, S. A. and Jakoby, R. and Heinrich, W. (2013):
RF-power GaN transistors with tunable BST pre-matching.
In: Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2013
Creators: Bengtsson, O. and Maune, H. and Wiens, A. and Chevtchenko, S. A. and Jakoby, R. and Heinrich, W.
Title: RF-power GaN transistors with tunable BST pre-matching
Language: English
Uncontrolled Keywords: III-V semiconductors;barium compounds;gallium compounds;power HEMT;power transistors;strontium compounds;titanium compounds;varactors;wide band gap semiconductors;BST;GaN;RF power transistors;frequency 2 GHz to 3 GHz;gain 20 dB;load pull measurements;power HEMT;size 2 mm;tunable BST prematching;varactor;Assembly;Logic gates;Power generation;Transistors;Tuning;Varactors;Voltage measurement;Adaptive Matching;Ferroelectrics;Gallium Nitride;Power Amplifiers;Tunable Components
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Date Deposited: 08 Dec 2014 13:03
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