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Improved adhesion of DLC films on copper substrates by preimplantation

Flege, Stefan ; Hatada, Ruriko ; Ensinger, Wolfgang ; Baba, Koumei (2014)
Improved adhesion of DLC films on copper substrates by preimplantation.
In: Surface and Coatings Technology, 256
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The adhesion of diamond-like carbon (DLC) films on copper substrates is usually very poor. However, the adhesive strength of the films can be improved by a preimplantation step. With plasma based ion implantation and deposition, the preimplantation step and the film deposition can be realized with the same experimental setup. The effect of the implantation of several different gaseous species (N2, O2, Ar, CO2, C2H4, and air) at -10 kV was investigated. For O2, N2 and C2H4 the influence of the pulse voltage (-5, -10, -15 kV) was examined. The samples were characterized by elemental depth profiling (XPS, SIMS), and the adhesion was evaluated with a pull tester. Most of the preimplantation treatments increase the adhesion of the DLC films on the copper substrates considerably to values of 10-15 MPa. The best result was obtained with -15 kV oxygen preimplantation.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Flege, Stefan ; Hatada, Ruriko ; Ensinger, Wolfgang ; Baba, Koumei
Art des Eintrags: Bibliographie
Titel: Improved adhesion of DLC films on copper substrates by preimplantation
Sprache: Englisch
Publikationsjahr: Oktober 2014
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Surface and Coatings Technology
Jahrgang/Volume einer Zeitschrift: 256
Reihe: 12th International Workshop on Plasma Based Ion Implantation and Deposition
URL / URN: http://www.sciencedirect.com/science/article/pii/S0257897213...
Kurzbeschreibung (Abstract):

The adhesion of diamond-like carbon (DLC) films on copper substrates is usually very poor. However, the adhesive strength of the films can be improved by a preimplantation step. With plasma based ion implantation and deposition, the preimplantation step and the film deposition can be realized with the same experimental setup. The effect of the implantation of several different gaseous species (N2, O2, Ar, CO2, C2H4, and air) at -10 kV was investigated. For O2, N2 and C2H4 the influence of the pulse voltage (-5, -10, -15 kV) was examined. The samples were characterized by elemental depth profiling (XPS, SIMS), and the adhesion was evaluated with a pull tester. Most of the preimplantation treatments increase the adhesion of the DLC films on the copper substrates considerably to values of 10-15 MPa. The best result was obtained with -15 kV oxygen preimplantation.

Freie Schlagworte: adhesion, copper, DLC, Implantation, PBII
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 14 Sep 2014 15:59
Letzte Änderung: 14 Sep 2014 15:59
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