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Macro- and microscopic properties of strontium doped indium oxide

Nikolaenko, Y. M. and Kuzovlev, Y. E. and Medvedev, Y. V. and Mezin, N. I. and Fasel, C. and Gurlo, A. and Schlicker, L. and Bayer, T. J. M. and Genenko, Y. A. (2014):
Macro- and microscopic properties of strontium doped indium oxide.
In: Journal of Applied Physics, AIP Publishing LLC, pp. 043704, 116, (4), ISSN 0021-8979, [Online-Edition: http://dx.doi.org/10.1063/1.4891216],
[Article]

Abstract

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T = 20–300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10−13 cm2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

Item Type: Article
Erschienen: 2014
Creators: Nikolaenko, Y. M. and Kuzovlev, Y. E. and Medvedev, Y. V. and Mezin, N. I. and Fasel, C. and Gurlo, A. and Schlicker, L. and Bayer, T. J. M. and Genenko, Y. A.
Title: Macro- and microscopic properties of strontium doped indium oxide
Language: English
Abstract:

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T = 20–300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10−13 cm2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

Journal or Publication Title: Journal of Applied Physics
Volume: 116
Number: 4
Publisher: AIP Publishing LLC
Uncontrolled Keywords: Doping, Ozone, Indium, Electrical resistivity,; Vacancies
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > A - Synthesis
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > A - Synthesis > Subproject A4: Novel functional ceramics using anionic substitution in oxidic systems
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 29 Jul 2014 12:28
Official URL: http://dx.doi.org/10.1063/1.4891216
Additional Information:

SFB 595 Cooperation A4, C5, D3

Identification Number: doi:10.1063/1.4891216
Funders: We recognize providing a facility for point contact measurements with different metal pins and useful discussions with Professor A. Klein. , This work was partly supported by the Deutsche Forschungsgemeinschaft through the Sonderforschungsbereich 595 “Electrical Fatigue in Functional Materials.”
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