Okamura, Koshi ; Hahn, Horst (2012)
Potential distribution in channel of thin-film transistors.
In: Applied Physics Letters, 101 (1)
doi: 10.1063/1.4733290
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Channel voltages of ZnO thin-film transistors during operation are precisely probed at two trisecting positions between the source and drain electrode, which exactly corresponds to characteristic transistor events, such as carrier injection, carrier accumulation, pinch-off formation, and drain current saturation. Furthermore, a simple numerical calculation based on the gradual channel approximation and the current continuity equation reveals that the channel voltages have a non-linear potential distribution and an intrinsic but significant potential drop in the region near to the drain electrode in most of the linear regime.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Okamura, Koshi ; Hahn, Horst |
| Art des Eintrags: | Bibliographie |
| Titel: | Potential distribution in channel of thin-film transistors |
| Sprache: | Englisch |
| Publikationsjahr: | 2012 |
| Verlag: | AIP Publishing LLC |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 101 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1063/1.4733290 |
| Kurzbeschreibung (Abstract): | Channel voltages of ZnO thin-film transistors during operation are precisely probed at two trisecting positions between the source and drain electrode, which exactly corresponds to characteristic transistor events, such as carrier injection, carrier accumulation, pinch-off formation, and drain current saturation. Furthermore, a simple numerical calculation based on the gradual channel approximation and the current continuity equation reveals that the channel voltages have a non-linear potential distribution and an intrinsic but significant potential drop in the region near to the drain electrode in most of the linear regime. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 17 Jun 2014 11:02 |
| Letzte Änderung: | 17 Jun 2014 11:02 |
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