Genenko, Yuri A. ; Hirsch, Ofer ; Erhart, Paul (2014)
Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields.
In: Journal of Applied Physics, 115 (10)
doi: 10.1063/1.4867984
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Genenko, Yuri A. ; Hirsch, Ofer ; Erhart, Paul |
| Art des Eintrags: | Bibliographie |
| Titel: | Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields |
| Sprache: | Englisch |
| Publikationsjahr: | 14 März 2014 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 115 |
| (Heft-)Nummer: | 10 |
| DOI: | 10.1063/1.4867984 |
| Kurzbeschreibung (Abstract): | Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1 V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3 V. |
| Freie Schlagworte: | Doping; Surface charge; Charge carriers; Polarization; Ferroelectric materials; Ferroelectric domain structure; Crystal defects; Electric fields; Electrostatics; Semiconductor device modeling |
| Zusätzliche Informationen: | SFB 595 C5 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung > Teilprojekt C5: Phänomenologische Modellierung von Injektion, Transport und Rekombination in Bauelementen aus organischen Halbleitern sowie aus nichtorganischen Ferroelektrika 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung 11 Fachbereich Material- und Geowissenschaften Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 12 Mär 2014 10:10 |
| Letzte Änderung: | 12 Mär 2014 10:10 |
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