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High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors

Nasr, Babak and Wang, Di and Kruk, Robert and Rösner, Harald and Hahn, Horst and Dasgupta, Subho (2012):
High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors.
23, In: Advanced Functional Materials, (14), Wiley-VCH Verlag GmbH & Co. KGaA, pp. 1750-1758, ISSN 1616301X, [Online-Edition: http://dx.doi.org/10.1002/adfm.201202500],
[Article]

Abstract

Single-crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide-nanowire field-effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on-currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical-gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all-solid-state FETs with outstanding performance; the field-effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single-nanowire transistor are 62 cm2/Vs, 107, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically-gated field-effect transistor (EG FET) devices is supported by their long-term stability in air. Moreover, due to the good conductivity (≈10−2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut-off frequency in excess of 100 kHz is measured for in-plane FETs with large gate-channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top-gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all-solution processed and high throughput techniques.

Item Type: Article
Erschienen: 2012
Creators: Nasr, Babak and Wang, Di and Kruk, Robert and Rösner, Harald and Hahn, Horst and Dasgupta, Subho
Title: High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors
Language: English
Abstract:

Single-crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide-nanowire field-effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on-currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical-gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all-solid-state FETs with outstanding performance; the field-effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single-nanowire transistor are 62 cm2/Vs, 107, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically-gated field-effect transistor (EG FET) devices is supported by their long-term stability in air. Moreover, due to the good conductivity (≈10−2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut-off frequency in excess of 100 kHz is measured for in-plane FETs with large gate-channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top-gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all-solution processed and high throughput techniques.

Journal or Publication Title: Advanced Functional Materials
Volume: 23
Number: 14
Publisher: Wiley-VCH Verlag GmbH & Co. KGaA
Uncontrolled Keywords: field-effect transistors, flexible electronics, zinc oxide, nanodevices, nanowires
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Joint Research Laboratory Nanomaterials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 06 Feb 2014 08:15
Official URL: http://dx.doi.org/10.1002/adfm.201202500
Identification Number: doi:10.1002/adfm.201202500
Funders: The authors acknowledge the financial support by the Deutsche Forschungsgemeinschaft (DFG) under contract HA1344/25-1 and by the Center for Functional Nanostructures (CFN) at Karlsruhe Institute of Technology (KIT)., The authors acknowledge the financial support by the State of Hessen for a major equipment grant for the Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD)., The authors acknowledge the opportunity to use the facilities of the Karlsruhe Nano-Micro Facility (KNMF).
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