Nasr, Babak ; Wang, Di ; Kruk, Robert ; Rösner, Harald ; Hahn, Horst ; Dasgupta, Subho (2012)
High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors.
In: Advanced Functional Materials, 23 (14)
doi: 10.1002/adfm.201202500
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Single-crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide-nanowire field-effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on-currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical-gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all-solid-state FETs with outstanding performance; the field-effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single-nanowire transistor are 62 cm2/Vs, 107, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically-gated field-effect transistor (EG FET) devices is supported by their long-term stability in air. Moreover, due to the good conductivity (≈10−2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut-off frequency in excess of 100 kHz is measured for in-plane FETs with large gate-channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top-gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all-solution processed and high throughput techniques.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Nasr, Babak ; Wang, Di ; Kruk, Robert ; Rösner, Harald ; Hahn, Horst ; Dasgupta, Subho |
| Art des Eintrags: | Bibliographie |
| Titel: | High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors |
| Sprache: | Englisch |
| Publikationsjahr: | 12 April 2012 |
| Verlag: | Wiley-VCH Verlag GmbH & Co. KGaA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Functional Materials |
| Jahrgang/Volume einer Zeitschrift: | 23 |
| (Heft-)Nummer: | 14 |
| DOI: | 10.1002/adfm.201202500 |
| Kurzbeschreibung (Abstract): | Single-crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide-nanowire field-effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on-currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical-gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all-solid-state FETs with outstanding performance; the field-effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single-nanowire transistor are 62 cm2/Vs, 107, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically-gated field-effect transistor (EG FET) devices is supported by their long-term stability in air. Moreover, due to the good conductivity (≈10−2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut-off frequency in excess of 100 kHz is measured for in-plane FETs with large gate-channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top-gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all-solution processed and high throughput techniques. |
| Freie Schlagworte: | field-effect transistors, flexible electronics, zinc oxide, nanodevices, nanowires |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 06 Feb 2014 08:15 |
| Letzte Änderung: | 06 Feb 2014 08:15 |
| PPN: | |
| Sponsoren: | The authors acknowledge the financial support by the Deutsche Forschungsgemeinschaft (DFG) under contract HA1344/25-1 and by the Center for Functional Nanostructures (CFN) at Karlsruhe Institute of Technology (KIT)., The authors acknowledge the financial support by the State of Hessen for a major equipment grant for the Joint Research Laboratory Nanomaterials at Technische Universität Darmstadt (TUD)., The authors acknowledge the opportunity to use the facilities of the Karlsruhe Nano-Micro Facility (KNMF). |
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