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Effect of composition and strain on the electrical properties of LaNiO3 thin films

Zhu, Mingwei ; Komissinskiy, Philipp ; Radetinac, Aldin ; Vafaee, Mehran ; Wang, Zhanjie ; Alff, Lambert (2013)
Effect of composition and strain on the electrical properties of LaNiO3 thin films.
In: Applied Physics Letters, 103 (14)
doi: 10.1063/1.4823697
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The Ni content of LaNi1−xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni 3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

Typ des Eintrags: Artikel
Erschienen: 2013
Autor(en): Zhu, Mingwei ; Komissinskiy, Philipp ; Radetinac, Aldin ; Vafaee, Mehran ; Wang, Zhanjie ; Alff, Lambert
Art des Eintrags: Bibliographie
Titel: Effect of composition and strain on the electrical properties of LaNiO3 thin films
Sprache: Englisch
Publikationsjahr: 2013
Verlag: AIP Publishing LLC
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Physics Letters
Jahrgang/Volume einer Zeitschrift: 103
(Heft-)Nummer: 14
DOI: 10.1063/1.4823697
Kurzbeschreibung (Abstract):

The Ni content of LaNi1−xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni 3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

Freie Schlagworte: Nickel, Thin films, Thin film growth, electrical resistivity, Epitaxy, Vacancies, Temperature measurement, Charge carriers, Thin film structure, X-ray diffraction
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 09 Jan 2014 09:14
Letzte Änderung: 09 Jan 2014 09:14
PPN:
Sponsoren: This work was supported by the National Natural Science of Foundation of China (Nos. 51202256, 51172238), , the National Basic Research Program (No. 2010CB934603), the Ministry of Science and Technology of China, and by Deutsche Forschungsgemeinshaft (KO 4093/1-1), M. W. Zhu would like to thank China Scholarship Council (CSC) for the financial support of his scientific visit to Technical University of Darmstadt, Germany.
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