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Effect of composition and strain on the electrical properties of LaNiO3 thin films

Zhu, Mingwei and Komissinskiy, Philipp and Radetinac, Aldin and Vafaee, Mehran and Wang, Zhanjie and Alff, Lambert (2013):
Effect of composition and strain on the electrical properties of LaNiO3 thin films.
In: Applied Physics Letters, AIP Publishing LLC, p. 141902, 103, (14), ISSN 00036951, [Online-Edition: http://dx.doi.org/10.1063/1.4823697],
[Article]

Abstract

The Ni content of LaNi1−xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni 3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

Item Type: Article
Erschienen: 2013
Creators: Zhu, Mingwei and Komissinskiy, Philipp and Radetinac, Aldin and Vafaee, Mehran and Wang, Zhanjie and Alff, Lambert
Title: Effect of composition and strain on the electrical properties of LaNiO3 thin films
Language: English
Abstract:

The Ni content of LaNi1−xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni 3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.

Journal or Publication Title: Applied Physics Letters
Volume: 103
Number: 14
Publisher: AIP Publishing LLC
Uncontrolled Keywords: Nickel, Thin films, Thin film growth, electrical resistivity, Epitaxy, Vacancies, Temperature measurement, Charge carriers, Thin film structure, X-ray diffraction
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 09 Jan 2014 09:14
Official URL: http://dx.doi.org/10.1063/1.4823697
Identification Number: doi:10.1063/1.4823697
Funders: This work was supported by the National Natural Science of Foundation of China (Nos. 51202256, 51172238), , the National Basic Research Program (No. 2010CB934603), the Ministry of Science and Technology of China, and by Deutsche Forschungsgemeinshaft (KO 4093/1-1), M. W. Zhu would like to thank China Scholarship Council (CSC) for the financial support of his scientific visit to Technical University of Darmstadt, Germany.
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