Vafaee, Mehran ; Baghaie Yazdi, Mehrdad ; Radetinac, Aldin ; Cherkashinin, Gennady ; Komissinskiy, Philipp ; Alff, Lambert (2013)
Strain engineering in epitaxial La1−xSr1+xMnO4 thin films.
In: Journal of Applied Physics, 113 (5)
doi: 10.1063/1.4790654
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have synthesized epitaxial thin films of La1−xSr1+xMnO4 with x = 0.0 and x = 0.5 by pulsed laser deposition on NdGaO3 and LaSrAlO4 substrates with different lattice mismatch. X-ray analysis shows that these layered doped manganites can be grown fully strained allowing to tune the lattice degrees of freedom which otherwise are a function of chemical composition x. Since the crystal structure is strongly coupled to the magnetic, orbital, and charge degrees of freedom in the doped manganites, the demonstrated strain engineering is the base for an extrinsic control of, e.g., charge-orbital order.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2013 |
Autor(en): | Vafaee, Mehran ; Baghaie Yazdi, Mehrdad ; Radetinac, Aldin ; Cherkashinin, Gennady ; Komissinskiy, Philipp ; Alff, Lambert |
Art des Eintrags: | Bibliographie |
Titel: | Strain engineering in epitaxial La1−xSr1+xMnO4 thin films |
Sprache: | Englisch |
Publikationsjahr: | 6 Februar 2013 |
Verlag: | AIP Publishing LLC |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
Jahrgang/Volume einer Zeitschrift: | 113 |
(Heft-)Nummer: | 5 |
DOI: | 10.1063/1.4790654 |
Kurzbeschreibung (Abstract): | We have synthesized epitaxial thin films of La1−xSr1+xMnO4 with x = 0.0 and x = 0.5 by pulsed laser deposition on NdGaO3 and LaSrAlO4 substrates with different lattice mismatch. X-ray analysis shows that these layered doped manganites can be grown fully strained allowing to tune the lattice degrees of freedom which otherwise are a function of chemical composition x. Since the crystal structure is strongly coupled to the magnetic, orbital, and charge degrees of freedom in the doped manganites, the demonstrated strain engineering is the base for an extrinsic control of, e.g., charge-orbital order. |
Freie Schlagworte: | Epitaxy, Orbital charge, Thin film growth, Doping, Charge coupled devices, Pulsed laser depo9sition, Thin film deposition, Single crystals, Antiferromagnetism, Lattice constants |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
Hinterlegungsdatum: | 09 Jan 2014 08:45 |
Letzte Änderung: | 28 Mär 2015 15:32 |
PPN: | |
Sponsoren: | This work is supported by the DFG through GK 1037 (TICMO). |
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