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High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering

Walker, Daniel E. and Major, Marton and Baghaie Yazdi, Mehrdad and Klyszcz, Andreas and Haeming, Marc and Bonrad, Klaus and Melzer, Christian and Donner, Wolfgang and von Seggern, Heinz (2012):
High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering.
In: ACS Applied Materials & Interfaces, ACS Publications, pp. 6835-6841, 4, (12), ISSN 1944-8244, [Online-Edition: http://dx.doi.org/10.1021/am302004j],
[Article]

Abstract

Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm2 V–1 s–1. The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.

Item Type: Article
Erschienen: 2012
Creators: Walker, Daniel E. and Major, Marton and Baghaie Yazdi, Mehrdad and Klyszcz, Andreas and Haeming, Marc and Bonrad, Klaus and Melzer, Christian and Donner, Wolfgang and von Seggern, Heinz
Title: High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering
Language: English
Abstract:

Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm2 V–1 s–1. The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.

Journal or Publication Title: ACS Applied Materials & Interfaces
Volume: 4
Number: 12
Publisher: ACS Publications
Uncontrolled Keywords: thin-film transistor, solution process, multilayer, morphology, density, porosity
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science > Structure Research
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 07 Jan 2014 10:17
Official URL: http://dx.doi.org/10.1021/am302004j
Identification Number: doi:10.1021/am302004j
Funders: The authors wish to thank Merck KGaA, Darmstadt, Germany for funding this work.
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