Buckow, Alexander ; Kupka, Katharina ; Retzlaff, Reiner ; Kurian, Jose ; Alff, Lambert (2012)
Superconducting epitaxial thin films of CeNi[sub x]Bi[sub 2] with a bismuth square net structure.
In: Applied Physics Letters, 101 (16)
doi: 10.1063/1.4760264
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have grown highly epitaxial and phase pure thin films of the arsenic-free pnictidecompoundCeNixBi2 on (100) MgO substrates by reactive molecular beam epitaxy (RMBE). X-ray diffraction and reflection high-energy electron diffraction of the films confirm the ZrCuSiAs structure with a Bi square net layer. Superconductivity was observed in magnetization and resistivity measurements for x = 0.75 to 0.93 in these CeNixBi2thin films with the highest critical temperature of 4.05 K and a resistive transition width of 0.1 K for x = 0.86. Our results indicate that thin film deposition by RMBE provides a tool to synthesize high-quality pnictidesuperconductors of the novel 112 type.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Buckow, Alexander ; Kupka, Katharina ; Retzlaff, Reiner ; Kurian, Jose ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Superconducting epitaxial thin films of CeNi[sub x]Bi[sub 2] with a bismuth square net structure |
| Sprache: | Englisch |
| Publikationsjahr: | 18 Oktober 2012 |
| Verlag: | AIP Publishing LLC |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 101 |
| (Heft-)Nummer: | 16 |
| DOI: | 10.1063/1.4760264 |
| Kurzbeschreibung (Abstract): | We have grown highly epitaxial and phase pure thin films of the arsenic-free pnictidecompoundCeNixBi2 on (100) MgO substrates by reactive molecular beam epitaxy (RMBE). X-ray diffraction and reflection high-energy electron diffraction of the films confirm the ZrCuSiAs structure with a Bi square net layer. Superconductivity was observed in magnetization and resistivity measurements for x = 0.75 to 0.93 in these CeNixBi2thin films with the highest critical temperature of 4.05 K and a resistive transition width of 0.1 K for x = 0.86. Our results indicate that thin film deposition by RMBE provides a tool to synthesize high-quality pnictidesuperconductors of the novel 112 type. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 07 Jan 2014 10:12 |
| Letzte Änderung: | 07 Jan 2014 10:12 |
| PPN: | |
| Sponsoren: | This work was supported by DFG through Grant No. SPP 1458 (LA 560/10). |
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