Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas (2012)
Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface.
In: Advanced Functional Materials, 22 (22)
doi: 10.1002/adfm.201200405
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Li, Shunyi ; Zheng, Yuliang ; Jakoby, Rolf ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Electrically Programmable Bistable Capacitor for High-Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface |
| Sprache: | Englisch |
| Publikationsjahr: | 21 November 2012 |
| Verlag: | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Advanced Functional Materials |
| Jahrgang/Volume einer Zeitschrift: | 22 |
| (Heft-)Nummer: | 22 |
| DOI: | 10.1002/adfm.201200405 |
| Kurzbeschreibung (Abstract): | Hysteresis is induced in paraelectric (Ba,Sr)TiO3 (BST) thin-film capacitors by inserting an Al2O3 barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al2O3 layer and charge storage at the BST/Al2O3 interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al2O3. Taking into account the low loss of (Ba,Sr)TiO3 capacitors, the observed switching and retention characteristics are suitable for application as non-volatile programmable high-frequency devices, e.g., in radio-frequency identification. |
| Freie Schlagworte: | (Ba;Sr)TiO3,, steresis, interface charge, non-volatile, tunable high-frequency component |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 29 Nov 2013 08:51 |
| Letzte Änderung: | 26 Mär 2015 20:03 |
| PPN: | |
| Sponsoren: | This work was supported by the German Science Foundation (DFG) in the framework of the Research Training Group (GRK 1037) on Tunable Integrated Components for Microwaves and Optics, TICMO. |
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