Proffit, Diana E. ; Harvey, Steven P. ; Klein, Andreas ; Schafranek, Robert ; Emery, Jonathan D. ; Buchholz, D. Bruce ; Chang, Robert P. H. ; Bedzyk, Michael J. ; Mason, Thomas O. (2012)
Surface studies of crystalline and amorphous Zn–In–Sn–O transparent conducting oxides.
In: Thin Solid Films, 520 (17)
doi: 10.1016/j.tsf.2012.04.075
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn–In–Sn–O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In2O3 (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0–7.7 eV) that are similar to undoped In2O3. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7–8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8–5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO2, Al-doped ZnO, Sn-doped In2O3), making ZITO more versatile for applications.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Proffit, Diana E. ; Harvey, Steven P. ; Klein, Andreas ; Schafranek, Robert ; Emery, Jonathan D. ; Buchholz, D. Bruce ; Chang, Robert P. H. ; Bedzyk, Michael J. ; Mason, Thomas O. |
| Art des Eintrags: | Bibliographie |
| Titel: | Surface studies of crystalline and amorphous Zn–In–Sn–O transparent conducting oxides |
| Sprache: | Englisch |
| Publikationsjahr: | 30 Juni 2012 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Thin Solid Films |
| Jahrgang/Volume einer Zeitschrift: | 520 |
| (Heft-)Nummer: | 17 |
| DOI: | 10.1016/j.tsf.2012.04.075 |
| Kurzbeschreibung (Abstract): | X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn–In–Sn–O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In2O3 (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0–7.7 eV) that are similar to undoped In2O3. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7–8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8–5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO2, Al-doped ZnO, Sn-doped In2O3), making ZITO more versatile for applications. |
| Freie Schlagworte: | Work function, Indium tin oxide, Zinc indium tin oxide, Transparent conducting oxide, Ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, Thin film |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 28 Nov 2013 10:32 |
| Letzte Änderung: | 26 Mär 2015 20:17 |
| PPN: | |
| Sponsoren: | The Darmstadt efforts were supported by the German Science Foundation (DFG) in the framework of the Collaborative Research Center on Electrical Fatigue of Functional Materials (SFB 595, project D3), and by the DFG (grant no. KL1225/4)., The Northwestern synthetic and structural efforts were supported by the National Science Foundation (NSF, grant no. DMR-0602521, SPH, JDE, DBB, RPHC, MJB, TOM) and the surface studies were supported by the U.S. Department of Energy, , Office of Basic Energy Sciences as part of the ANSER Energy Frontier Research Center (DOE, grant no. DE-SC0001059, DEP, RPHC, TOM)., DEP also acknowledges support of an NSF Graduate Research Fellowship. Use of the Advanced Photon Source., An Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under contract no. DE-AC02-06CH11357. |
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