Gassmann, Jürgen ; Broetz, Joachim ; Klein, Andreas (2012)
Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy.
In: Applied Surface Science, 258 (8)
doi: 10.1016/j.apsusc.2011.12.062
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Gassmann, Jürgen ; Broetz, Joachim ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Februar 2012 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
| Jahrgang/Volume einer Zeitschrift: | 258 |
| (Heft-)Nummer: | 8 |
| DOI: | 10.1016/j.apsusc.2011.12.062 |
| Kurzbeschreibung (Abstract): | The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage. |
| Freie Schlagworte: | Indium tin oxide (ITO), Zinc phtalocyanine (ZnPc), Photoelectron spectroscopy, Magnetron sputtering, Energy band alignment, Inverted OLED |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 28 Nov 2013 09:11 |
| Letzte Änderung: | 26 Mär 2015 20:18 |
| PPN: | |
| Sponsoren: | This work was supported by the German Federal Ministry for Education and Research (BMBF) under contract no. FKZ 13N10474 (TOPAS). |
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