Hock, René ; Mayer, Thomas ; Jaegermann, Wolfram (2012)
p-Type Doping of Spiro-MeOTAD with WO3 and the Spiro-MeOTAD/WO3 Interface Investigated by Synchrotron-Induced Photoelectron Spectroscopy.
In: The Journal of Physical Chemistry C, 116 (34)
doi: 10.1021/jp301179v
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
p-Doping of the organic hole conductor Spiro-MeOTAD with tungsten oxide (WO3) is investigated by synchrotron-induced photoelectron spectroscopy (SXPS). Similar valence band spectra and electronic-state energies are shown for Spiro-MeOTAD films evaporated in UHV and prepared by drop-casting from cyclohexanone solution. In coevaporated Spiro-MeOTAD:WO3 films with varying amounts of WO3, a maximum shift of the HOMO binding energy by 0.98 eV toward the Fermi level is found. Similar shifts are induced in Spiro-MeOTAD at interfaces of Spiro-MeOTAD on WO3 and WO3 on Spiro-MeOTAD. In addition, interface dipole potentials of 0.87 and 1.36 eV, respectively, are induced in the two deposition sequences. The exchanged charge appears as a reduced W5+ component in W4f core orbital and additional W5d gap-state emissions. A correlation of the interface charge transfer to the doping mechanism is discussed.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Hock, René ; Mayer, Thomas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | p-Type Doping of Spiro-MeOTAD with WO3 and the Spiro-MeOTAD/WO3 Interface Investigated by Synchrotron-Induced Photoelectron Spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 30 August 2012 |
| Verlag: | ACS Publications |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | The Journal of Physical Chemistry C |
| Jahrgang/Volume einer Zeitschrift: | 116 |
| (Heft-)Nummer: | 34 |
| DOI: | 10.1021/jp301179v |
| Kurzbeschreibung (Abstract): | p-Doping of the organic hole conductor Spiro-MeOTAD with tungsten oxide (WO3) is investigated by synchrotron-induced photoelectron spectroscopy (SXPS). Similar valence band spectra and electronic-state energies are shown for Spiro-MeOTAD films evaporated in UHV and prepared by drop-casting from cyclohexanone solution. In coevaporated Spiro-MeOTAD:WO3 films with varying amounts of WO3, a maximum shift of the HOMO binding energy by 0.98 eV toward the Fermi level is found. Similar shifts are induced in Spiro-MeOTAD at interfaces of Spiro-MeOTAD on WO3 and WO3 on Spiro-MeOTAD. In addition, interface dipole potentials of 0.87 and 1.36 eV, respectively, are induced in the two deposition sequences. The exchanged charge appears as a reduced W5+ component in W4f core orbital and additional W5d gap-state emissions. A correlation of the interface charge transfer to the doping mechanism is discussed. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen Exzellenzinitiative > Exzellenzcluster > Center of Smart Interfaces (CSI) Exzellenzinitiative Exzellenzinitiative > Exzellenzcluster |
| Hinterlegungsdatum: | 26 Nov 2013 12:18 |
| Letzte Änderung: | 26 Mär 2015 20:22 |
| PPN: | |
| Sponsoren: | We acknowledge our cooperation partner BASF within the OPEG 2010 project funded by the BMBF within the organic photovoltaic initiative. |
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