Ma, Quan-Bao ; Kaiser, Bernhard ; Ziegler, Jürgen ; Fertig, Dominic ; Jaegermann, Wolfram (2012)
XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting.
In: Journal of Physics D: Applied Physics, 45 (32)
doi: 10.1088/0022-3727/45/32/325101
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The electrochemical (EC) properties of single-crystalline p-type 3C-SiC films on p-Si substrates were investigated as electrodes in H2SO4 aqueous solutions in dark and under white light illumination. Before EC tests, the SiC films were etched by HF solution and aqua-regia–HF solution, respectively, and then investigated by x-ray photoelectron spectroscopy (XPS) including one untreated SiC sample. After EC tests, XPS was also applied to investigate the surface chemical state changes. The EC measurements indicate that the p-type 3C-SiC films on p-Si substrates can generate a cathodic photocurrent as the photocathode, which corresponds to hydrogen production, and generate an anodic photocurrent as the photoanode, which corresponds to oxygen evolution. XPS shows the surface of all the SiC films was oxidized due to anodic oxidation applied by a positive bias during the EC test, which indicates the formation of silicon oxides, CO2 or CO and carbonates.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Ma, Quan-Bao ; Kaiser, Bernhard ; Ziegler, Jürgen ; Fertig, Dominic ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting |
| Sprache: | Englisch |
| Publikationsjahr: | 27 Juli 2012 |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Physics D: Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 45 |
| (Heft-)Nummer: | 32 |
| DOI: | 10.1088/0022-3727/45/32/325101 |
| Kurzbeschreibung (Abstract): | The electrochemical (EC) properties of single-crystalline p-type 3C-SiC films on p-Si substrates were investigated as electrodes in H2SO4 aqueous solutions in dark and under white light illumination. Before EC tests, the SiC films were etched by HF solution and aqua-regia–HF solution, respectively, and then investigated by x-ray photoelectron spectroscopy (XPS) including one untreated SiC sample. After EC tests, XPS was also applied to investigate the surface chemical state changes. The EC measurements indicate that the p-type 3C-SiC films on p-Si substrates can generate a cathodic photocurrent as the photocathode, which corresponds to hydrogen production, and generate an anodic photocurrent as the photoanode, which corresponds to oxygen evolution. XPS shows the surface of all the SiC films was oxidized due to anodic oxidation applied by a positive bias during the EC test, which indicates the formation of silicon oxides, CO2 or CO and carbonates. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen Exzellenzinitiative > Exzellenzcluster > Center of Smart Interfaces (CSI) Exzellenzinitiative Exzellenzinitiative > Exzellenzcluster |
| Hinterlegungsdatum: | 25 Nov 2013 09:31 |
| Letzte Änderung: | 26 Mär 2015 20:53 |
| PPN: | |
| Sponsoren: | The authors gratefully acknowledge the financial support of this work by the BMBF Foundation of Germany, and the authors also acknowledge the donation of single-crystalline 3C-SiC samples by the Leibniz Institute for Crystal Growth, Berlin. |
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