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Bi1/2Na1/2TiO3–BaTiO3 based thick-film capacitors for high-temperature applications

Zang, Jiadong ; Jo, Wook ; Zhang, Haibo ; Rödel, Jürgen (2014)
Bi1/2Na1/2TiO3–BaTiO3 based thick-film capacitors for high-temperature applications.
In: Journal of the European Ceramic Society, 34 (1)
doi: 10.1016/j.jeurceramsoc.2013.07.020
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Thick films with compositions (1 − x)(0.94Bi1/2Na1/2TiO3–0.06BaTiO3)–x(K0.5Na0.5NbO3) (x = 0, 0.03, 0.09 and 0.18) have been prepared and their structural and electrical properties have been investigated. Dielectric properties show that these films are well suited for high-temperature applications due to their low variance in permittivity (<15%) over large temperature ranges. The thick film with x = 0.18 offers an operational temperature range from room temperature to 350 °C. Films with x = 0.03 and 0.09 also possess a stabile permittivity up to 400 °C. The improvement in the thermal stability of the permittivity is attributed to the addition of K0.5Na0.5NbO3 which leads to breaking of the long-range order in the materials. However, the polarizability of the materials was found to decrease possibly due to the clamping effect of the substrate. The characteristics of each film are discussed based on dielectric and electrical properties.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Zang, Jiadong ; Jo, Wook ; Zhang, Haibo ; Rödel, Jürgen
Art des Eintrags: Bibliographie
Titel: Bi1/2Na1/2TiO3–BaTiO3 based thick-film capacitors for high-temperature applications
Sprache: Englisch
Publikationsjahr: Januar 2014
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of the European Ceramic Society
Jahrgang/Volume einer Zeitschrift: 34
(Heft-)Nummer: 1
DOI: 10.1016/j.jeurceramsoc.2013.07.020
Kurzbeschreibung (Abstract):

Thick films with compositions (1 − x)(0.94Bi1/2Na1/2TiO3–0.06BaTiO3)–x(K0.5Na0.5NbO3) (x = 0, 0.03, 0.09 and 0.18) have been prepared and their structural and electrical properties have been investigated. Dielectric properties show that these films are well suited for high-temperature applications due to their low variance in permittivity (<15%) over large temperature ranges. The thick film with x = 0.18 offers an operational temperature range from room temperature to 350 °C. Films with x = 0.03 and 0.09 also possess a stabile permittivity up to 400 °C. The improvement in the thermal stability of the permittivity is attributed to the addition of K0.5Na0.5NbO3 which leads to breaking of the long-range order in the materials. However, the polarizability of the materials was found to decrease possibly due to the clamping effect of the substrate. The characteristics of each film are discussed based on dielectric and electrical properties.

Freie Schlagworte: Ferroelectrics; High temperature dielectrics; Capacitor; Thick films
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 23 Sep 2013 11:12
Letzte Änderung: 23 Sep 2013 11:12
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