Bayer, Thorsten J. M. ; Wachau, André ; Fuchs, Anne ; Deuermeier, Jonas ; Klein, Andreas (2012)
Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3.
In: Chemistry of Materials, 24 (23)
doi: 10.1021/cm301732t
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The growth of Al2O3 onto Sn-doped In2O3 (ITO) by atomic layer deposition (ALD) was studied in situ using X-ray photoelectron spectroscopy. Significant diffusion of oxygen from the substrate destroys the self-terminated monolayer adsorption of the metal precursor and results in a nominal initial growth per cycle of >1 nm. The observed mechanism precludes the preparation of monolayer thick Al2O3 films on ITO substrates by ALD. The energy band alignment at the ITO/Al2O3 interface is significantly different from that obtained when magnetron sputtering is used for the deposition of Al2O3 onto ITO [Gassenbauer et al., Phys. Chem. Chem. Phys.2009, 11, 3049]. The difference is attributed to a pinning of the Fermi level in the ALD-Al2O3 layer close to midgap, which is attributed to the incorporation of hydrogen in the film during growth.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Bayer, Thorsten J. M. ; Wachau, André ; Fuchs, Anne ; Deuermeier, Jonas ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Atomic Layer Deposition of Al2O3 onto Sn-Doped In2O3: Absence of Self-Limited Adsorption during Initial Growth by Oxygen Diffusion from the Substrate and Band Offset Modification by Fermi Level Pinning in Al2O3 |
| Sprache: | Englisch |
| Publikationsjahr: | 19 November 2012 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Chemistry of Materials |
| Jahrgang/Volume einer Zeitschrift: | 24 |
| (Heft-)Nummer: | 23 |
| DOI: | 10.1021/cm301732t |
| Kurzbeschreibung (Abstract): | The growth of Al2O3 onto Sn-doped In2O3 (ITO) by atomic layer deposition (ALD) was studied in situ using X-ray photoelectron spectroscopy. Significant diffusion of oxygen from the substrate destroys the self-terminated monolayer adsorption of the metal precursor and results in a nominal initial growth per cycle of >1 nm. The observed mechanism precludes the preparation of monolayer thick Al2O3 films on ITO substrates by ALD. The energy band alignment at the ITO/Al2O3 interface is significantly different from that obtained when magnetron sputtering is used for the deposition of Al2O3 onto ITO [Gassenbauer et al., Phys. Chem. Chem. Phys.2009, 11, 3049]. The difference is attributed to a pinning of the Fermi level in the ALD-Al2O3 layer close to midgap, which is attributed to the incorporation of hydrogen in the film during growth. |
| Freie Schlagworte: | indium−tin oxide; AL2O3; atomic layer deposition; initial growth; interface properties; band alignment; hydrogen impurity |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung 11 Fachbereich Material- und Geowissenschaften Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 16 Aug 2013 12:15 |
| Letzte Änderung: | 25 Mär 2015 22:15 |
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