Seggern, Heinz von (1979)
A new model of isothermal charge transport for negatively corona-charged Teflon.
In: Journal of Applied Physics, 50 (11)
doi: 10.1063/1.325863
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this paper we study theoretically and experimentally the transport of electrons in Teflon FEP type A under isothermal conditions (145 °C) in open circuit. We suggest a theoretical model including surface, shallow, and deep traps. The model leads to a system of partial differential equations which was solved numerically using a finite‐step algorithm. By fitting the theoretical to the experimental surface‐voltage decay curves we found a shallow‐trap‐modulated mobility μQ=1.6×10−12 cm2/V sec, a deep‐trap‐modulated transit time tT=1.25×105 sec in the voltage range of −200 to −400 V for electrons in 25‐μm‐thick material. We also determined the time constants for surface injection, trapping, and detrapping. The deep‐trap‐modulated transit time is in good agreement with measured values. Further we found a voltage‐independent mean free path for the shallow‐trapped carriers λ=6.5 μm. These traps were assumed to be in thermal equilibrium with the free carriers in the conduction band.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1979 |
| Autor(en): | Seggern, Heinz von |
| Art des Eintrags: | Bibliographie |
| Titel: | A new model of isothermal charge transport for negatively corona-charged Teflon |
| Sprache: | Englisch |
| Publikationsjahr: | November 1979 |
| Verlag: | American Institute of Physics Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 50 |
| (Heft-)Nummer: | 11 |
| DOI: | 10.1063/1.325863 |
| Kurzbeschreibung (Abstract): | In this paper we study theoretically and experimentally the transport of electrons in Teflon FEP type A under isothermal conditions (145 °C) in open circuit. We suggest a theoretical model including surface, shallow, and deep traps. The model leads to a system of partial differential equations which was solved numerically using a finite‐step algorithm. By fitting the theoretical to the experimental surface‐voltage decay curves we found a shallow‐trap‐modulated mobility μQ=1.6×10−12 cm2/V sec, a deep‐trap‐modulated transit time tT=1.25×105 sec in the voltage range of −200 to −400 V for electrons in 25‐μm‐thick material. We also determined the time constants for surface injection, trapping, and detrapping. The deep‐trap‐modulated transit time is in good agreement with measured values. Further we found a voltage‐independent mean free path for the shallow‐trapped carriers λ=6.5 μm. These traps were assumed to be in thermal equilibrium with the free carriers in the conduction band. |
| Freie Schlagworte: | MATHEMATICAL MODELS, TELFON, CORONA DISCHARGES, CHARGE CARRIERS, DATA, ISOTHERMAL PROCESSES, MEDIUM TEMPERATURES, SURFACES, TRAPS, DIFFERENTIAL EQUATIONS, NUMERICAL SOLUTION, MODULATION, MOBILITY, ELECTRONS |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 13 Jun 2013 07:40 |
| Letzte Änderung: | 13 Aug 2021 14:08 |
| PPN: | |
| Sponsoren: | The author is grateful to the Deutsche Forschungsgemeinschaft for partial financial support of this work. |
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